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The Gorsky effect in the synthesis of silicon-carbide films from silicon by topochemical substitution of atoms

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Abstract

The mechanisms of evaporation of silicon from the surface of silicon carbide (SiC) grown by atomic substitution are studied. It is assumed that the emergence of elastic deformations at the stage of cooling of the sample with a SiC film is one of the causes of Si evaporation. It is demonstrated theoretically that elastic stresses induce the mechanochemical Gorsky effect in the SiC layer. This effect initiates redistribution of Si and C atoms in the SiC layer, which results in violation of the stoichiometry of films and asymmetry of their composition over the SiC-layer thickness. A method for growing epitaxial SiC films with a homogeneous composition and a low density of silicon vacancies from a gas mixture of carbon monoxide and trichlorosilane is proposed.

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Authors and Affiliations

  1. Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, 199178, Russia

    S. A. Kukushkin & A. V. Osipov

  2. ITMO University, St. Petersburg, 197101, Russia

    S. A. Kukushkin & A. V. Osipov

  3. Peter the Great St. Petersburg Polytechnic University, St. Petersburg, 195251, Russia

    S. A. Kukushkin

Authors
  1. S. A. Kukushkin
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  2. A. V. Osipov
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Correspondence to S. A. Kukushkin.

Additional information

Original Russian Text © S.A. Kukushkin, A.V. Osipov, 2017, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2017, Vol. 43, No. 13, pp. 81–88.

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Kukushkin, S.A., Osipov, A.V. The Gorsky effect in the synthesis of silicon-carbide films from silicon by topochemical substitution of atoms. Tech. Phys. Lett. 43, 631–634 (2017). https://doi.org/10.1134/S1063785017070094

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  • DOI: https://doi.org/10.1134/S1063785017070094

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