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Temperature quenching of spontaneous emission in tunnel-injection nanostructures

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

The spontaneous-emission spectra in the near-IR range (0.8–1.3 μm) from inverted tunnel-injection nanostructures are measured. These structures contain an InAs quantum-dot layer and an InGaAs quantum-well layer, separated by GaAs barrier spacer whose thickness varies in the range 3–9 nm. The temperature dependence of this emission in the range 5–295 K is investigated, both for optical excitation (photoluminescence) and for current injection in p–n junction (electroluminescence). At room temperature, current pumping proves more effective for inverted tunnel-injection nanostructures with a thin barrier (<6 nm), when the apexes of the quantum dots connect with the quantum well by narrow InGaAs straps (nanobridges). In that case, the quenching of the electroluminescence by heating from 5 to 295 K is slight. The quenching factor S T of the integrated intensity I is S T = I 5/I 295 ≈ 3. The temperature stability of the emission from inverted tunnel-injection nanostructures is discussed on the basis of extended Arrhenius analysis.

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Authors and Affiliations

  1. Fock Institute of Physics, St. Petersburg State University, Petrodvorets, 198504, Russia

    V. G. Talalaev & B. V. Novikov

  2. Martin Luther University Halle-Wittenberg, ZIK SiLi-nano, Halle, 06120, Germany

    V. G. Talalaev

  3. Academic University, Nanotechnology Center, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    G. E. Cirlin

  4. Institute of Analytical Instrument Design, Russian Academy of Sciences, St. Petersburg, 190103, Russia

    G. E. Cirlin

  5. Martin Luther University Halle-Wittenberg, ICMS, Halle, 06120, Germany

    H. S. Leipner

Authors
  1. V. G. Talalaev
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  2. B. V. Novikov
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  3. G. E. Cirlin
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  4. H. S. Leipner
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Correspondence to V. G. Talalaev.

Additional information

Original Russian Text © V.G. Talalaev, B.V. Novikov, G.E. Cirlin, H.S. Leipner, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 11, pp. 1531–1539.

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Talalaev, V.G., Novikov, B.V., Cirlin, G.E. et al. Temperature quenching of spontaneous emission in tunnel-injection nanostructures. Semiconductors 49, 1483–1492 (2015). https://doi.org/10.1134/S1063782615110214

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  • DOI: https://doi.org/10.1134/S1063782615110214

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