The Influence of Gamma Irradiation Dose on the Formation of Radiation Defects in xCu₂Se · (1 – x)As₂Se₃ Glasses

Abstract

The defects generated under exposure to gamma radiation at a temperature of 77 K in glasses lying along the xCu₂Se · (1 – x)As₂Se₃ quasi-binary join are studied by the electron paramagnetic resonance (EPR) method. The intensity of EPR signals (I) of radiation-induced defects associated with dangling bonds of atoms in the glass network is examined as a function of the gamma irradiation dose (D = 10⁴–1.5 × 10⁵ Gy). Unlike the As₂Se₃ glass, for which the signal intensity increases almost linearly with an increase in the irradiation dose, the curves I(D) for ternary glasses are characterized by saturation dependent on the copper content in the network. The saturation of the dependences I(D) at a high copper content is explained by the formation of regions with an increased Cu content and the enhancement of the electron–phonon interaction, which prevents the stabilization of dangling bonds in the glass network. The concentration of NO₂ paramagnetic molecules formed by nitrogen and oxygen uncontrollable impurities increases linearly with an increase in the irradiation dose.