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Effects of Heat-Treatment Duration and Dislocation Density on the Transport Properties of Semi-insulating Gallium Arsenide Crystals

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Abstract

Data are presented on carrier mobility and strain in semi-insulating undoped gallium arsenide crystals containing different dislocation densities and annealed at 900°C for various lengths of time. The effect of the dislocations is found to depend on heat-treatment time, which is attributed to changes in the composition of defect clouds, in particular, owing to As diffusion.

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Authors and Affiliations

  1. Institute of Semiconductor Physics (Kherson Branch), National Academy of Sciences of Ukraine, Kherson, Ukraine

    M. B. Litvinova, S. V. Shutov & I. V. Boriskin

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  1. M. B. Litvinova
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  2. S. V. Shutov
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  3. I. V. Boriskin
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Litvinova, M.B., Shutov, S.V. & Boriskin, I.V. Effects of Heat-Treatment Duration and Dislocation Density on the Transport Properties of Semi-insulating Gallium Arsenide Crystals. Inorganic Materials 37, 102–104 (2001). https://doi.org/10.1023/A:1004132921547

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