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Growth and piezoelectric properties of amorphous and crystalline (K1−xNax)NbO3−based thin films

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Abstract

(K1−xNax)NbO3 (KNN)-based piezoelectric thin films have been extensively studied for application in micro-electromechanical systems. However, growing homogenous crystalline (K1−xNax)NbO3 (CKNN) films with good piezoelectric properties is difficult because Na2O and K2O evaporate during the growth process at high temperatures. Recently, amorphous (K1−xNax)NbO3 (AKNN) films containing KNN nanocrystals with good piezoelectric properties have been fabricated at low temperatures. Furthermore, [001]-oriented crystalline (K1−xNax)NbO3 (OCKNN) films with excellent piezoelectric properties have been grown at low temperatures (≤ 350 °C) using a metal-oxide nanosheet seed layer. This novel method is excellent for the growth of homogeneous KNN thin films. These films were deposited on a polymer substrate; thus, they can be utilized in future flexible electronic devices. In this study, the structural and piezoelectric properties of AKNN- and CKNN-based films fabricated at high temperatures, along with the growth process and application of OCKNN-based thin films at low temperatures, are reviewed.

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Acknowledgements

This study was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (2020R1A2B5B01002063, 2020M3D1A2101018). We thank the KU-KIST Graduate School Program of Korea University.

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This study was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT).

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Correspondence to Sahn Nahm.

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Woo, JU., Kim, SW., Kim, DS. et al. Growth and piezoelectric properties of amorphous and crystalline (K1−xNax)NbO3−based thin films. J. Korean Ceram. Soc. 58, 249–268 (2021). https://doi.org/10.1007/s43207-021-00108-6

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