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Super-high responsivity and harsh environment-resistant ultraviolet photodetector enabled by Ta2NiSe5/GaN van der Waals heterojunction

Ta2NiSe5/GaN范德华异质结用于具有超高响应性和耐恶劣环境的紫外光电探测器

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Abstract

Gallium nitride (GaN) has garnered significant research interest for ultraviolet (UV) photodetectors due to its direct bandgap, inherent UV absorption window, and high breakdown voltage. In this work, a new ternary chalcogenides Ta2NiSe5 with high mobility is successfully stacked with unintentionally-doped GaN to creat an integrated mixed-dimensional Ta2NiSe5/GaN (2D/3D) van der Waals heterojunction with a typical type-I band alignment. The resulting Ta2NiSe5/GaN heterojunction exhibits excellent UV detection performance, with a pronounced light on/off ratio of 107 and a large responsivity of 1.22 × 104 A W−1. Moreover, it demonstrates an enhanced detectivity up to 1.3 × 1016 Jones under 365-nm light illumination at a bias of 4 V. The photodetector also exhibits a fast response speed of 1.22/3.16 ms. Remarkably, the device showcases exceptional stability, repeatability, and tolerance to harsh environmental conditions, including high temperature and acidic condition. Furthermore, leveraging the high responsivity, detectivity, and light on/off ratio of the photodetector, we successfully integrate this heterojunction device into UV optical communication, high-lighting its potential in information transmission.

摘要

氮化镓由于其直接带隙、固有的紫外吸收和高击穿电压引起了人们对其在紫外光电探测领域的极大研究兴趣. 在本工作中, 我们成功地将新型三元硫族化合物Ta2NiSe5与非故意掺杂的GaN堆叠, 形成了具有典型I型能带排列的混合维度的Ta2NiSe5/GaN (2D/3D)范德瓦尔斯异质结构. 该异质结构表现出优异的紫外探测性能(光开关比为107, 响应度为1.22 × 104A W−1). 此外, 在365 nm的光照和4 V的偏压下, 探测度提高至1.3 × 1016 Jones, 并表现出1.22/31.6 ms的快速响应速率. 值得注意的是, 该器件还具有优异的稳定性、可重复性和抗恶劣环境条件(包括高温和酸性条件)的耐受性. 得益于光电探测器的高响应度、探测度和光开关比, 我们成功地将该异质结构器件集成到紫外光通信中, 证明了Ta2NiSe5/GaN光电探测器在信息传输中有着优异的应用前景.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (62175040, 61805044, 12064027, and 62065014), the Science and Technology Program of Guangzhou (202201010242), Guangdong Basic and Applied Basic Research Foundation (2022A1515110981), 2022 Jiangxi Province High-level and High-skilled Leading Talent Training Project Selected (No. 63), Jiangxi Provincial Department of Education Science and Technology Key Project (GJJ2204302), and Jiujiang Municipal Science and Technology Program (Natural Science Foundation, Innovative Talents) (2022-2023).

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  1. These authors contributed equally to this work.

Authors and Affiliations

  1. Jiangxi Engineering Laboratory for Optoelectronics Testing Technology, Nanchang Hangkong University, Nanchang, 330063, China

    Jianpeng Lei  (雷剑鹏) & Wenbo Xiao  (肖文波)

  2. Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan, 528225, China

    Tao Zheng  (郑涛), Wanglong Wu  (吴望龙), Xiaozhou Wang  (王小周) & Mengmeng Yang  (杨孟孟)

  3. School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China

    Zhaoqiang Zheng  (郑照强)

  4. Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha, 410082, China

    Quansheng Zheng  (郑筌升)

  5. College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, China

    Jingbo Li  (李京波)

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  1. Jianpeng Lei  (雷剑鹏)
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  2. Tao Zheng  (郑涛)
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  7. Wenbo Xiao  (肖文波)
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Contributions

Author contributions Zheng Z, Yang M, Xiao W and Li J designed the experiments and supervised the entire project. Lei J and Zheng T wrote the original draft. Wu W and Zheng Q organized data. Zheng Z and Yang M participated in revision of the manuscript. All authors contributed to the general discussion.

Corresponding authors

Correspondence to Wenbo Xiao  (肖文波), Jingbo Li  (李京波) or Mengmeng Yang  (杨孟孟).

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Conflict of interest The authors declare that they have no conflict of interest.

Additional information

Supplementary information Supporting data are available in the online version of the paper.

Jianpeng Lei obtained a Master’s degree in electronic information from Nanchang Hangkong University in 2023. His main research direction is the optoelectronic detection of semiconductor materials.

Tao Zheng is a Doctor candidate at the School of Semiconductor Science and Technology, South China Normal University. He received his Master degree from the School of Semiconductor Science and Technology, South China Normal University in 2020. His research interests are the synthesis, design, and applications of novel 2D optoelectronic materials.

Wenbo Xiao received his PhD degree in microelectronics and solid state electronics, from the Institute of Semiconductor, Chinese Academy of Sciences, in 2008. Dr. Xiao is a professor of the Key Laboratory of Opto-Electronic Information Science and Technology of Jiangxi Province, Nanchang Hangkong University, China. His research interests include semiconductor device physics and semiconductor photoelectric inspection.

Jingbo Li received his PhD degree from the Institute of Semiconductors, Chinese Academy of Sciences (2001). Then, he spent six years at Lawrence Berkeley National Laboratory. From 2007 to 2019, he served as a professor at the Institute of Semiconductors, Chinese Academy of Sciences. He is currently a professor at the College of Optical Science and Engineering, Zhejiang University. His research interests include the design, fabrication, and application of novel nanostructured semiconductors.

Mengmeng Yang is an associate professor at the School of Semiconductor Science and Technology, South China Normal University. She received her PhD degree in 2022 from Guangdong University of Technology. Her research interests mainly focus on the design, synthesis and photodetection applications of novel 2D materials and their heterostructures.

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Super-high responsivity and harsh environment-resistant ultraviolet photodetector enabled by Ta2NiSe5/GaN van der Waals heterojunction

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Lei, J., Zheng, T., Wu, W. et al. Super-high responsivity and harsh environment-resistant ultraviolet photodetector enabled by Ta2NiSe5/GaN van der Waals heterojunction. Sci. China Mater. 67, 863–870 (2024). https://doi.org/10.1007/s40843-023-2736-6

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