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Strengthened interlayer interaction and improved room-temperature thermoelectric performance of Ag-doped n-type Bi2Te2.7Se0.3

Ag掺杂n型Bi2Te2.7Se0.3的层间相互作用增强和室温热电性能改善

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Abstract

Doping n-type Bi2Te3-based alloys with Cu or Ag has been proven an effective way to improve their thermoelectric performance. However, the doping behavior is still not clear and the underneath mechanism needs more evidence to clarify. Herein, a study on the structure and transport properties of polycrystalline Ag-doped n-type Bi2Te2.7Se0.3 is performed. Raman and X-ray photoelectron spectroscopy analysis suggests that Ag ions are situated at the interstitial sites and transfer electrons to the neighbouring Te(Se). The newly established Ag-Te(Se) bonds lead to strengthened interlayer interaction and improved carrier mobility. Te(Se) vacancy, as an intrinsic feature in the polycrystalline Bi2Te2.7Se0.3 alloy, is alleviated due to the formation of Ag-Te(Se) bonds. The carrier concentration can be gradually adjusted to a lower level, at which largely improved room-temperature thermoelectric performance is yielded. As a result, the room-temperature dimensionless figure of merit ZT value and cooling performance of the optimal Ag-doped Bi2Te2.7Se0.3 are enhanced by nearly 60% and 75% as compared with those of the pristine Bi2Te2.7Se0.3.

摘要

采用Cu或Ag掺杂是提高n型Bi2Te3基合金热电性能的有效途径, 但Cu或Ag的掺杂行为仍不明确, 其背后的作用机理还需要进一步证实. 本文对Ag掺杂n型Bi2Te2.7Se0.3多晶热电材料的结构和输运性质进行了研究. 拉曼和X射线光电子能谱分析表明, Ag离子位于间隙位置, 并向邻近的Te(Se)转移电子. Ag与Te(Se)成键导致层间相互作用增强, 载流子迁移率升高. 由于Ag-Te(Se)成键, Bi2Te2.7Se0.3多晶的本征Te(Se)空位形成得到缓解, 进而逐渐将载流子浓度调节到较低水平, 因此Bi2Te2.7Se0.3的室温热电性能得到显著改善. 与单一Bi2Te2.7Se0.3相比, 最优Ag掺杂Bi2Te2.7Se0.3材料的室温热电优值ZT和制冷性能分别提高近60%和75%.

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Acknowledgements

This work was supported by the National Key R&D Program of China (2019YFA0704903), the National Natural Science Foundation of China (11834012, 52172232, 52130203, and 91963122), and Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory (XHT2020-004).

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Authors and Affiliations

  1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China

    Long Li  (李龙), Ping Wei  (魏平), Maojun Yang  (杨毛俊), Wanting Zhu  (朱婉婷), Xiaolei Nie  (聂晓蕾), Wenyu Zhao  (赵文俞) & Qingjie Zhang  (张清杰)

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  1. Long Li  (李龙)
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Contributions

Zhao W, Wei P, and Zhang Q supervised the overall project. Li L and Yang M carried out the experiments and property measurements. Li L, Wei P, and Zhao W wrote the manuscript. Zhu W and Nie X performed the material characterization. All authors analyzed the results.

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Correspondence to Ping Wei  (魏平) or Wenyu Zhao  (赵文俞).

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Supporting data are available in the online version of the paper.

Long Li is currently studying for his MS degree at Wuhan University of Technology (WUT). He obtained a Bachelor’s degree in engineering from Xi’an Technology University in 2020. His research focuses on thermal electromagnetic materials and devices.

Ping Wei is currently working at the State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (SKLATMSP), WUT as a professor. He received his BS degree at Shandong University in 2005, MS degree in 2009 and PhD in 2012 at WUT. His research focuses on the performance optimization and structural characterization of thermoelectric and magnetic materials.

Wenyu Zhao received his MS degree in 1996 at China University of Geosciences and PhD degree in 2004 at WUT. He has been working at SKLATMSP of WUT as a full professor since 2008. His research interests include thermoelectric materials, magnetic thermoelectric materials, magnetic ferrite materials, novel structure thermoelectric devices, and thermoelectric application technology.

Qingjie Zhang received his MS degree in 1984 and PhD degree in 1990 from Huazhong University of Science and Technology. He is working at SKLATMSP of WUT as a full professor and at Xianhu Laboratory as the director. He is an academician of the Chinese Academy of Sciences. His research focuses on the thermoelectric materials and the related application technology.

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40843_2023_2485_MOESM1_ESM.pdf

Strengthened interlayer interaction and improved room-temperature thermoelectric performance of Ag doped n-type Bi2Te2.7Se0.3

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Li, L., Wei, P., Yang, M. et al. Strengthened interlayer interaction and improved room-temperature thermoelectric performance of Ag-doped n-type Bi2Te2.7Se0.3. Sci. China Mater. 66, 3651–3658 (2023). https://doi.org/10.1007/s40843-023-2485-5

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