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Rational tuning of the cation ratio in metal oxide semiconductor nanofibers for low-power neuromorphic transistors

用于低功率神经形态晶体管的金属氧化物半导体纳米纤维中阳离子比例的合理调整

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Abstract

Wide-bandgap metal oxide semiconductor (MOS) nanofiber neuromorphic transistors (NFNTs) can be potentially used to construct low-power bio-inspired artificial circuits. However, the cation ratio of MOS used for NFNTs is mostly adopted without detailed reasons in literature. In this study, we have for the first time focused on systematically tuning the cation ratio of indium zinc oxide (InZnO)-based NFNTs, fabricated by a low-cost electrospinning technique combined with a facile nanofiber transfer process. These electrical-driven NFNTs based on double-cation InZnO nanofibers can greatly simplify experimental procedures. Among the cation ratios of InxZn1−xO (x = 0.6, 0.7, 0.8, 0.9), we found that NFNTs based on In0.7Zn0.3O exhibited the lowest excitatory postsynaptic currents and offered electrical benefits for low-power operations and synaptic function simulations. The rational tuning of MOS nanofiber composition opens the door for high-performance low-power NFNTs.

摘要

宽带隙金属氧化物半导体(MOS)纳米纤维神经形态晶体管(NFNTs)可以潜在地用于构建低功耗的仿生人工电路. 但文献中对于NFNTs所采用MOS的阳离子配比并没有给出详细的原因. 在本研究中, 我们首次系统地研究了用低成本静电纺丝技术结合纳米纤维转移工艺制备的氧化铟锌(InZnO)基NFNTs的阳离子比例. 基于双阳离子InZnO纳米纤维的电驱动NFNTs可以大大简化实验过程. 在InxZn1−xO的阳离子比(x = 0.6, 0.7, 0.8, 0.9)中, 我们发现基于In0.7Zn0.3O的NFNTs表现出最低的兴奋性突触后电流, 可以为低功耗操作和突触功能模拟提供电效益. MOS纳米纤维成分的合理调整可以为高性能低功耗NFNTs提供新的思路.

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Acknowledgements

This work was financially supported by the Natural Science Foundation of Shandong Province, China (ZR2020QF104) and the Key Research and Development Program of Shandong Province, China (2019GGX102067).

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Authors and Affiliations

Authors

Contributions

Cong H and Chang Y performed the experiments; Zhou R and Zhang W designed the samples; Cong H and Sun G performed the data analysis; Xu P and Qin Y synthesized and characterized the samples; Ramakrishna S contributed to the discussion; Cong H and Chang Y wrote the paper with support from Wang F and Liu X. All authors contributed to the general discussion, and have given approval to the final version of the manuscript.

Corresponding authors

Correspondence to Xuhai Liu  (刘旭海) or Fengyun Wang  (王凤云).

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Conflict of interest

The authors declare that they have no conflict of interest.

Supplementary information

Supporting data are available in the online version of the paper.

Haofei Cong is currently a Master candidate at Qingdao University. Her research interest focuses on low-dimensional optoelectronic materials and devices.

Yu Chang is currently a research intern at Fujian Institute of Research on Structure of Matter, Chinese Academy of Sciences. He received his Master’s degree from Qingdao University in 2022. His research interest focuses on electrical and optical synapses and neuromorphic devices.

Xuhai Liu received his PhD degree in functional materials & nanotechnology from the University of Southern Denmark in 2013, and later worked at Technische Universitat Dresden in Germany, Nanjing University of Science & Technology, and Nanjing University of Information Science and Technology. He is currently an associate professor at Qingdao University, with research interests focusing on low-dimensional material-based optoelectronics and bioelectronics.

Fengyun Wang received her PhD degree in materials physics & chemistry from the City University of Hong Kong in 2012, and later worked as a research fellow. In 2013, she joined Qingdao University as a professor. Her research program aims to utilize chemistry, physics, materials science, and various engineering disciplines to synthesize low-dimensional metal oxide semiconductors, perovskites, and MXenes, for bioelectronics, photonics, and energy storage devices.

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Cong, H., Chang, Y., Zhou, R. et al. Rational tuning of the cation ratio in metal oxide semiconductor nanofibers for low-power neuromorphic transistors. Sci. China Mater. 66, 3251–3260 (2023). https://doi.org/10.1007/s40843-022-2445-y

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