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Light-/steam-driven polymeric crosslinking with porous multistructure pattern for ultrastable and fast-speed memory

光/蒸气协同构建交联多孔聚合物复合结构基超稳定高速阻变存储器

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Abstract

Organic memories typically comprise memristive polymer mediums sandwiched between two electrodes, with the advantages of wet manufacturing and modulated function. However, the issues associated with structural instability, low-speed switch, and hard pattern in polymeric memories are the main obstacles towards practical uses. Here, we present an ultrastable and fast-speed memory array that uses amorphous polymer nanofilm with light-/steam-driven crosslinked porous multistructure as memristive materials. The polymer diode shows nonvolatile rewritable flash memory characteristics, with a high ON/OFF ratio, long retention time, and high speeds of set (70 ns) and reset (845 ns) operations. Impressively, the memory cell undergoes harsh conditions in ultraviolet irradiation and extreme temperatures. By rationally integrating the array with target sensors, an artificial sensory memory architecture is constructed to mimic visual/thermal perception and recording, demonstrating great potential for biomimetic neuromorphic electronics. Our results advance a commercial perspective on memristive organics capable of integration patterns and high performance.

摘要

有机阻变存 储器由两个电极及夹在其间的阻变聚合物层组成, 具有湿法制备和功能可调的优点. 然而, 该类存储器还存在结构稳定性差、开关速度慢和图案化困难等问题. 在本文中, 我们利用光/蒸汽协同方法制备了一种具有交联多孔复合结构的非晶态聚合物薄膜, 并将其作为阻变活性材料构建了一种具有高稳定性和高读取速度特征的存储阵列. 所制备的聚合物二极管表现出非易失性的FLASH存储特性, 具有高开关比、长维持时间以及快速信息写入(70 ns)和擦除(845 ns)等特征. 令人印象深刻的是, 该存储器件能够承受紫外辐射和极端温度等恶劣环境的考验. 通过将存储阵列和特定传感器集成, 构建了能模拟视觉/热感知和记忆功能的人造感知记忆系统, 表明该系统在仿生神经形态电子领域具有巨大的应用潜力. 该工作为制备具有高稳定性和高读取速度特征的聚合物存储阵列提供了一种可靠的策略.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (62274088, 92164108, and 51703093).

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  1. These authors contributed equally to this work.

Authors and Affiliations

  1. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University, Nanjing, 211816, China

    Chaoyi Ban  (班超逸), Yuhang Yin  (尹宇航), Xu Luo  (罗旭), Zhengdong Liu  (刘正东), Xuemei Dong  (董雪梅), Dengfeng Zhang  (张登峰), Zifan Li  (李子凡), Yueyue Wu  (吴月悦), Juqing Liu  (刘举庆) & Wei Huang  (黄维)

  2. School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China

    Kang Chen  (陈康) & Minghua Tang  (唐明华)

  3. Key Laboratory for Organic Electronics and Information Displays, Nanjing University of Posts & Telecommunications, Nanjing, 210023, China

    Wei Huang  (黄维)

Authors
  1. Chaoyi Ban  (班超逸)
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Contributions

Liu J, Liu Z, and Huang W conceived and supervised the experiments. Liu J, Liu Z, Huang W, Ban C, and Yin Y proposed the ideas and formulated overarching research goals. Ban C and Yin Y performed the fabrication and electrical measurements of the memory device. Luo X assisted in electrical characteristic measurement. Yin Y, Chen K, and Tang M assisted in the synthesis of multistructure polymer. Dong X, Zhang D, Li Z, and Wu Y assisted in the characterization of samples. Ban C provided the data presentation. Liu J, Liu Z, and Ban C prepared the initial draft. All authors discussed the results and commented on the manuscript.

Corresponding authors

Correspondence to Zhengdong Liu  (刘正东), Juqing Liu  (刘举庆) or Wei Huang  (黄维).

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Conflict of interest

The authors declare that they have no conflict of interest.

Supplementary information

Supporting data are available in the online version of the paper.

Chaoyi Ban was born in Jiangsu, China. He obtained his PhD degree in materials physics and chemistry from Nanjing Tech University in 2022. He is currently a post-doctor at the School of Integrated Circuits, Peking University. His research interests include resistive random access memory, artificial sensory memory, and synaptic electronics.

Yuhang Yin obtained his PhD degree in materials physics and chemistry from Nanjing Tech University in 2021. His research interests include 2D polymer and resistive random access memory.

Zhengdong Liu is currently an associate professor at the School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, Nanjing, China. His research interests mainly focus on developing functional polymer materials for memories, synapses, and neuromorphic electronics.

Juqing Liu is a professor at the School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, Nanjing, China. His research interests mainly include carbon-based information materials for memories, synapses and neuromorphic electronics.

Wei Huang is Academician of the Chinese Academy of Sciences, Foreign Academician of Russian Academy of Sciences, and an eminent scientist in the area of organic optoelectronics and flexible electronics. He received his PhD degree from Peking University in 1992. His current research interests include organic/plastic/flexible electronics, bioelectronics, nanomaterials, nanoelectronics, and polymer chemistry.

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Ban, C., Yin, Y., Luo, X. et al. Light-/steam-driven polymeric crosslinking with porous multistructure pattern for ultrastable and fast-speed memory. Sci. China Mater. 66, 2023–2031 (2023). https://doi.org/10.1007/s40843-022-2350-7

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