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Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures

二维/三维硅基异质结光电应用研究进展

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Abstract

Silicon-based semiconductor technology has made great breakthroughs in the past few decades, but it is reaching the physical limits of Moore’s law. In recent years, the presence of two-dimensional (2D) materials was regarded as an opportunity to break the limitation of traditional silicon-based optoelectronic devices owing to their special structure and superior properties. In consideration of the widely studied hybrid integration of 2D material detectors and 3D silicon-based systems, in this paper, the basic properties of several 2D materials used in photodetectors are summarized. Subsequently, the progress in silicon photonic integrated photo-detectors based on 2D materials is reviewed, followed by the summarization of the device structure and main performances. Then, the combination of some other traditional and 2D devices is discussed as a supplement. Finally, the prospective development of the hybrid 2D/3D silicon-based heterostructures is expected.

摘要

以硅为基础的半导体技术在过去几十年随着摩尔定律取得了很 大进展, 但是它也正接近自己的物理极限. 近年来, 二维材料因其独特 的结构和优越的性能, 被认为是突破传统硅基光电器件限制的契机. 本 文针对二维材料探测器与三维硅基系统混合集成的研究现状, 简述了 几种用于光电探测器的二维材料的基本特性. 随后, 总结了基于二维材 料的硅光子集成光电探测器的研究进展, 并对其器件结构和主要性能 进行了展述. 其后, 又补充介绍了结合其他传统材料为衬底的二维器 件. 最后, 我们对二维/三维混合硅基异质结构的发展前景进行了展望.

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Acknowledgements

This work was financially supported by the National Key Research and Development Program of China (2017YFA0207500), the National Natural Science Foundation of China (62125404), and the CAS-JSPS Cooperative Research Project (GJHZ2021131).

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Authors and Affiliations

  1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

    Jingshu Zhou  (周劲澍), Kaiyao Xin  (辛凯耀), Zhongming Wei  (魏钟鸣) & Jianbai Xia  (夏建白)

  2. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China

    Jingshu Zhou  (周劲澍)

  3. Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 10083, China

    Xiangkai Zhao  (赵向凯) & Dongmei Li  (李冬梅)

Authors
  1. Jingshu Zhou  (周劲澍)
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  2. Kaiyao Xin  (辛凯耀)
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  3. Xiangkai Zhao  (赵向凯)
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  4. Dongmei Li  (李冬梅)
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  5. Zhongming Wei  (魏钟鸣)
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  6. Jianbai Xia  (夏建白)
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Contributions

Author contributions Original idea was conceived by Wei Z and Zhao X. Manuscript was drafted by Zhou J and Xin K. All authors discussed and commented on the manuscript.

Corresponding authors

Correspondence to Xiangkai Zhao  (赵向凯) or Zhongming Wei  (魏钟鸣).

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Conflict of interest The authors declare that they have no conflict of interest.

Additional information

Jingshu Zhou received his BSc degree in microelectronic engineering from Nankai University in 2013. Currently, he is a PhD student under the supervision of Prof. Zhongming Wei at the Institute of Semiconductors, Chinese Academy of Sciences (IOS-CAS). His research interests focus on the preparation and photoelectric properties of 2D materials.

Xiangkai Zhao received his BSc degree in optoelectronic information science and engineering from Jilin University in 2003. Currently, he is working as an engineer at IOS-CAS. His research interests focus on optoelectronic detection and optoelectronic system.

Zhongming Wei received his BS degree from Wuhan University (China) in 2005, and PhD degree from the Institute of Chemistry, CAS (ICCAS) in 2010 under the supervision of Prof. Daoben Zhu and Prof. Wei Xu. From August 2010 to January 2015, he worked as a postdoctoral fellow and then assistant professor in Prof. Thomas Bjornholm’s group at the University of Copenhagen, Denmark. Currently, he is working as a Professor at IOS-CAS. His research interests include low-dimensional semiconductors and their optoelectronic devices.

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Zhou, J., Xin, K., Zhao, X. et al. Recent progress in optoelectronic applications of hybrid 2D/3D silicon-based heterostructures. Sci. China Mater. 65, 876–895 (2022). https://doi.org/10.1007/s40843-021-1939-0

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  • DOI: https://doi.org/10.1007/s40843-021-1939-0

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