Abstract
In contrast to that of conventional inorganic semiconductor materials, the physics of the doping of π-conjugated organic materials is poorly understood. Therefore, this study aimed to investigate the mechanisms underlying the doping of polymer semiconductors. Electrolyte-gated transistors (EGTs) were used to electrochemically modulate the driving force for the molecular-ion doping of π-conjugated-semiconducting polymer films. Electrochemical transistors were fabricated in which 1-ethyl-3-methylimidazolium-bis(trifluoromethylsulfonyl) ([EMIM][TFSI]) and tetrafluoro-tetracyanoquinodimethane (F4-TCNQ)-doped poly(2,5-bis(3-tetradecylthiophen-2yl)thieon(3,2-b)thiophene) (PBTTT-C14) polymer films were used as the electrolyte gate medium and conducting channel layer, respectively. The EGTs with F4-TCNQ-doped PBTTT-C14 films showed conductivity maxima of ~ 600 S/cm at a critical gate bias, which indicated that there was negative transconductance at gate biases above this threshold. The conductivity maxima of the EGTs with F4-TCNQ-doped PBTTT-C14 films were caused by excess doping via ion exchange between the [TFSI] anion of the ionic liquid and the F4-TCNQ anion.
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This research was supported by the Pukyong National University Development Project Research Fund (2022).
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Lee, J.H., Chang, D.W., Kim, J. et al. Conductivity maxima in electrolyte-gated transistors with molecular-doped semiconducting polymer films. J. Korean Phys. Soc. 82, 491–496 (2023). https://doi.org/10.1007/s40042-023-00746-5
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DOI: https://doi.org/10.1007/s40042-023-00746-5