Abstract
In this present research work, we presented a new Bottom Gate P-Type Organic Field Effect Transistor (OFET) humidity sensor and its applicability towards humidity has been experimentally demonstrated. P-type organic semiconductor polyaniline (PANI) has been used in a variety of applications, including logic circuit components, electromagnetic shielding, chemical sensing, and anticorrosion. Humidity sensor can be used to monitor relative humidity (RH) in various environments. We only focus on the fabrication of conducting polymer OFETs with top contact to measure humidity and verify I-V properties. The current saturation (ISat) of p-type OFETs was 0.8 μA, while the threshold voltage VTh was 2.2 V. The results of FESEM have been perform to confirm that deposited thin film grown on the substrate is purely uniform. The Proposed sensor shows that organic gate dielectrics are a low-cost alternative to inorganic gate dielectrics with good electrical performance. The proposed OFET-based sensors have a number of benefits, such as high sensitivity, low cost, quick response, and physical flexibility.
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Acknowledgements
We thankfully acknowledge the financial support for this research work obtained from CSIR, Govt. of India (Ack.No.-143170/2 K15/1). Authors would like to thank Prof. Kalyan Kumar Chattopadhyay (Director, School of Material Science and Nanotechnology, Jadavpur University, India) for FESEM facility.
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Professor Subir kumar Sarkar analyzed data after taking humidity sensor data and guided us to complete the whole work. Anup Das helps in oxidation process. Mandira Biswas has a major contribution in writing the manuscript and after getting the data to plot the figure. All authors read and approved the final manuscript.
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Biswas, M., Dey, A. & Sarkar, S.K. Polyaniline Based Field Effect Transistor for Humidity Sensor. Silicon 14, 8919–8925 (2022). https://doi.org/10.1007/s12633-021-01594-3
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DOI: https://doi.org/10.1007/s12633-021-01594-3