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Analysis and Comparison of the Main Electrical Characteristics of Cu/n-type Si metal semiconductor structures at wide temperature Range

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Abstract

In this work, we investigated and compared the difference in temperature dependence of ideality values, barrier heights, and series resistances obtained using current-voltage (I-V) characteristics from various methods for Cu/n-type Si structures in the temperature range of 50 K–310 K by 20 K steps. From the I-V measurements using Cheung’s and Norde methods, the temperature-dependent changes of ideality factors (n), barrier heights (Φb), and sequence resistances (RS) were obtained. The experimental findings showed that all the values obtained from the Cu/n-type Si structure of the main parameters (n, Φb, and RS) decreased with increasing temperature, and that these values were also in strong agreement with each other. In addition, the interface states (NSS) were derived from the current-voltage characteristics as a function of temperature (K), and the experiment revealed that with increasing temperature, the interface states decreased. The interface states values for 50 K and 310 K of the Cu/n-type Si structure changed to be 8.10 × 1011 eV−1 cm−2 and 2.72 × 1011 eV−1 cm−2, respectively.

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Data Availability

All data and materials are available from the corresponding author(s) upon reasonable request.

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Acknowledgments

This work was supported by Kahramanmaraş Sütçü Imam University Commission of Scientific Research Projects under Grant No. 2019/2–40 M. We would like to thank Kahramanmaraş Sütçü İmam University for their financial support.

Funding

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

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Authors and Affiliations

  1. Faculty of Engineering, Department of Engineering Physics, Gaziantep University, 27310, Gaziantep, Turkey

    Ömer Faruk Bakkaloğlu

  2. Vocational High School of Technical Sciences, Department of Electricity and Energy, Bingol University, 12000, Bingöl, Turkey

    Kadir Ejderha

  3. Faculty of Engineering, Department of Electrical and Electronics Engineering, Atatürk University, TR-25240, Erzurum, Turkey

    Hasan Efeoğlu

  4. Faculty of Sciences and Arts, Department of Physics, Kahramanmaraş Sütçü Imam University, 46100, Kahramanmaras, Turkey

    Şükrü Karataş

  5. Faculty of Engineering and Natural Sciences, Engineering Physics Department, Istanbul Medeniyet University, TR-34700, Istanbul, Turkey

    Abdülmecit Türüt

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  1. Ömer Faruk Bakkaloğlu
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  2. Kadir Ejderha
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  3. Hasan Efeoğlu
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  4. Şükrü Karataş
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  5. Abdülmecit Türüt
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All of the authors contributed to the idea, experimental of the research, the analysis of the results, and the writing of the manuscript.

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Correspondence to Şükrü Karataş.

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Bakkaloğlu, Ö.F., Ejderha, K., Efeoğlu, H. et al. Analysis and Comparison of the Main Electrical Characteristics of Cu/n-type Si metal semiconductor structures at wide temperature Range. Silicon 14, 3493–3500 (2022). https://doi.org/10.1007/s12633-021-01132-1

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  • DOI: https://doi.org/10.1007/s12633-021-01132-1

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