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Investigation of 2T Pb-free wide bandgap perovskite/c-Si tandem device through simulation by SCAPS-1D

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Abstract

Shockley Queisser’s theory states that the efficiency of single-junction solar cells is restricted. This constraint can be avoided by employing a tandem (stacking multiple cells) setup. Furthermore, stacking layers such as Perovskite/silicon in tandem architecture might boost efficiency. In this research, SCAPD-1D was used to simulate a monolithic 2T Perovskite/silicon tandem solar cell. The tandem configuration is composed of a narrow bandgap (1.1 eV) crystalline silicon Heterojunction with an intrinsic thin layer (HIT) solar cell at the bottom and a wide bandgap (1.8 eV) lead-free Perovskite (Cs2AgBi0.75Sb0.25Br6) solar cell on top. The proposed tandem device is simulated as a standalone and integrated structure. The PCE of the calibrated standalone cell is 14.54% (top cell) and 21.66% (bottom cell), respectively. The calibrated cells are used to design an integrated tandem configuration. The current matching condition is accomplished at varied thicknesses of top and bottom absorber layers. A bottom cell's ideal current matching thickness is 230 µm, while a perovskite top cell is 550 nm. The overall conversion efficiency of the tandem device is 26%, with an FF of 79.18%.

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Acknowledgements

We would like to thank Prof. Marc Burgelman from the Electronics and Information Systems (ELIS) department at the University of Gent in Belgium provided SCAPS-1D to the writers.

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Authors and Affiliations

  1. Department of Electronics and Communication, Jaypee Institute of Information Technology, Noida, 201309, India

    SHIVANI CHAUHAN & RACHNA SINGH

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  1. SHIVANI CHAUHAN
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  2. RACHNA SINGH
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Correspondence to SHIVANI CHAUHAN.

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CHAUHAN, S., SINGH, R. Investigation of 2T Pb-free wide bandgap perovskite/c-Si tandem device through simulation by SCAPS-1D. Sādhanā 48, 40 (2023). https://doi.org/10.1007/s12046-023-02100-8

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  • DOI: https://doi.org/10.1007/s12046-023-02100-8

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