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Promotion of GaN Crystal Growth with Pre-stirring Using the Na-Flux Method

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Abstract

The Na-flux method has great potential for growing high-quality GaN single crystals. In this study, we used a simple pre-stirring process to grow GaN crystals by the Na-flux method. The yield of GaN crystals was 95.6% and the average growth thickness was about 412 μm on a hydride vapor-phase epitaxy (HVPE)-grown GaN seed with pre-stirring. The photoluminescence (PL) spectra showed that the relative intensity of blue and yellow band luminescence peaks of liquid-phase epitaxy (LPE) of GaN crystals was reduced when pre-stirring was employed. The x-ray rocking curve (XRC) showed that the full width at half maximum (FWHM) of the (002) peak for the LPE-GaN crystal with pre-stirring was 125 arcsec, which is smaller than that without pre-stirring. Therefore, we conclude that pre-stirring may be useful for fabricating high-quality bulk GaN crystals.

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Acknowledgments

This work was supported by the National Natural Science Foundation of China (Grant Nos. 61764006, 11904324), Jiangxi Provincial Cultivation Program for Academic and Technical Leaders of Major Subjects (Grant No. 20194BCJ22025), Key Program of Jiangxi Provincial Natural Science Foundation (Grant Nos. 20202ACB202006, 20224ACB202005), the Natural Science Foundation of Jiangxi Province of China (Grant No. 20202BABL202022), the Foundation of Jiangxi Educational Committee (Grant No. GJJ211117) and the Scientific Innovation Team of Optoelectronic Information in Nanchang.

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  1. Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science and Technology Normal University, Nanchang, 330038, China

    Ronglin Pan, Wenxiao Wu, Mingbin Zhou & Zhihua Xiong

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  1. Ronglin Pan
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Pan, R., Wu, W., Zhou, M. et al. Promotion of GaN Crystal Growth with Pre-stirring Using the Na-Flux Method. J. Electron. Mater. 52, 5466–5472 (2023). https://doi.org/10.1007/s11664-023-10480-0

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