Abstract
Artificial synapse is one of the potential electronics for constructing neural network hardware. In this work, Pt/LiSiOx/TiN analog artificial synapse memristor is designed and investigated. With the increase of compliance current (C. C.) under 0.6 mA, 1 mA, and 3 mA, the current in the high resistance state (HRS) presents an increasing variation, which indicates lithium ions participates in the operation process for Pt/LiSiOx/TiN memristor. Moreover, depending on the movement of lithium ions in the functional layer, the memristor illustrates excellent conduction modulation property, so the long-term potentiation (LTP) or depression (LTD) and paired-pulse facilitation (PPF) synaptic functions are successfully achieved. The neural network simulation for pattern recognition is proposed with the recognition accuracy of 91.4%. These findings suggest the potential application of the LiSiOx memristor in the neuromorphic computing.
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This work was supported by the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No. XDB44000000 and the National Natural Science Foundation of China (No. 61774057).
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Ke, S., Jiang, L., Zhao, Y. et al. Brain-like synaptic memristor based on lithium-doped silicate for neuromorphic computing. Front. Phys. 17, 53508 (2022). https://doi.org/10.1007/s11467-022-1173-2
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DOI: https://doi.org/10.1007/s11467-022-1173-2