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Transfer-free chemical vapor deposition graphene for nitride epitaxy: challenges, current status and future outlook

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Abstract

Graphene, a two-dimensional material with outstanding electrical and mechanical properties, has attracted considerable attention in the field of semiconductor technologies due to its potential use as a buffer layer for the epitaxial III-nitride growth. In recent years, significant progress has been made in the chemical vapor deposition growth of graphene on various insulating substrates for the nitride epitaxy, which offers a facile, inexpensive, and easily scalable methodology. However, certain challenges are still present in the form of producing high-quality graphene and achieving optimal interface compatibility with III-nitride materials. In this review, we provide an overview of the bottlenecks associated with the transferred graphene fabrication techniques and the state-of-the-art techniques for the transfer-free graphene growth. The present contribution highlights the current progress in the transfer-free graphene growth on different insulating substrates, including sapphire, quartz, SiO2/Si, and discusses the potential applications of transfer-free graphene in the III-nitride epitaxy. Finally, it includes the prospects of the transfer-free graphene growth for the III-nitride epitaxy and the challenges that should be overcome to realize its full potential in this field.

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Acknowledgements

This work was supported by the National Key R&D Program of China (2019YFA0708204), National Natural Science Foundation of China (T2188101), Science Fund for Distinguished Young Scholars of Jiangsu Province (BK20211503), and Jiangsu Funding Program for Excellent Postdoctoral Talent (2022ZB595).

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Authors and Affiliations

  1. College of Energy, Soochow Institute for Energy and Materials Innovations, SUDA-BGI Collaborative Innovation Center, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China

    Xiang Gao, Kaixuan Zhou, Zhongfan Liu & Jingyu Sun

  2. Beijing Graphene Institute, Beijing, 100095, China

    Xiang Gao, Kaixuan Zhou, Meng Li, Zhongfan Liu & Jingyu Sun

  3. Xiamen Silan Advanced Compound Semiconductor Co. Ltd., Xiamen, 361026, China

    Senlin Li & Jingfeng Bi

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  1. Xiang Gao
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  2. Senlin Li
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  3. Jingfeng Bi
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  4. Kaixuan Zhou
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  5. Meng Li
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  6. Zhongfan Liu
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  7. Jingyu Sun
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Correspondence to Kaixuan Zhou, Zhongfan Liu or Jingyu Sun.

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Gao, X., Li, S., Bi, J. et al. Transfer-free chemical vapor deposition graphene for nitride epitaxy: challenges, current status and future outlook. Sci. China Chem. 67, 824–840 (2024). https://doi.org/10.1007/s11426-023-1769-y

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