The principle of operation and the characteristics of the experimental equipment intended for the generation of boron ion plasma and beams are presented. The equipment comprises a vacuum arc source of boron ions with boron isotope separation in a magnetic field and a plasma generator for deposition of boron-containing coatings based on a planar magnetron sputter. Common to this equipment is the use of lanthanum hexaboride cathodes, but for planar magnetron, a pure boron cathode heated in the discharge is also used. It is shown that, when silicon wafer is implanted with beams of 10B+ and 11B+ boron isotope ions with doses of 1014–1016 ion/cm2, the isotopic effect of the diode properties of the implanted surface is observed. The results of studies of the properties of the obtained boron-containing coatings on model materials: stainless steel, crystal silicon, and E110 (Zr–1Nb) reactor alloy are presented.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 166–173, October, 2020.
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Bugaev, A.S., Vizir, A.V., Gushenets, V.I. et al. Modification of the Material Surface by Boron Ions Based on Vacuum Arc Discharge Systems and a Planar Magnetron. Russ Phys J 63, 1820–1828 (2021). https://doi.org/10.1007/s11182-021-02239-z
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DOI: https://doi.org/10.1007/s11182-021-02239-z