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Numerical analysis of high performance perovskite solar cells with stacked ETLs/C60 using SCAPS-1D device simulator

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Abstract

The latest advances in perovskite solar cells (PSCs) are reported with efficiencies over 25%. PSCs are one of the best developing research-level photovoltaic technologies. To the best of our knowledge, for the first time, we optimize all parameters containing thicknesses, conduction and valence band offset of ETLs (electron transport layers) and hole transport layer, defect densities and doping concentration densities for Cs0.05(FA0.77 MA0.23)0.95Pb(I0.77Br0.23)3. As an absorber layer with numerous stacked ETLs including SnO2/C60, ZnO/C60, TiO2/C60, CdZnS/C60 and CdSe/C60 are used. To find the efficiency, the SCAPS (Solar Cell Capacitance Simulator)-1D program is performed to realize which of stacked ETLs is more appropriate for both cost-effectiveness and high efficiency. After all, the efficiency for stacked SnO2/C60 at 31.16%, stacked ZnO/C60 at 31.22%, stacked TiO2/C60 at 30.55%, stacked CdZnS/C60 at 30.46% and stacked CdSe/C60 at 31.24% are reached.

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Acknowledgements

The authors appreciatively acknowledge the SCAPS-1D program developed by the group of Prof. Marc Burgelman from Gent University, Belgium and permitting to use it.

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Authors and Affiliations

  1. Department of Physics, College of Science, Shiraz University, Shiraz, 71946-84795, Iran

    Aminreza Mohandes & Mahmood Moradi

  2. Department of Materials Science and Engineering, School of Engineering, Shiraz University, Zand Blvd., Shiraz, 7134851154, Iran

    Mansour Kanani

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  1. Aminreza Mohandes
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  2. Mahmood Moradi
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AM: Simulations, Investigation, Conceptualization, Wrote the paper. MM: Spell checked, Conceptualization, Review, Revise the paper. MK: Check the calculations, Review the paper.

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Correspondence to Mahmood Moradi.

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Mohandes, A., Moradi, M. & Kanani, M. Numerical analysis of high performance perovskite solar cells with stacked ETLs/C60 using SCAPS-1D device simulator. Opt Quant Electron 55, 533 (2023). https://doi.org/10.1007/s11082-023-04778-w

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