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Anti-reflective effect of CeO2 thin films produced by sol-gel method on crystalline silicon solar cells

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Abstract

In this study, considering the good optical properties of CeO2 thin films, their anti-reflective effect on crystalline silicon solar cells was investigated. First molarity and then coating speed optimizations were carried out for the optimum thickness value. In addition, annealing temperature and annealing time optimizations were performed on CeO2 thin films, and the appropriate values for annealing temperature and annealing time were determined. As a result of all optimizations, it was found that 0.3 M concentration, 6000 rpm coating speed, 400 °C annealing temperature, and 120 min annealing time were optimum values for CeO2 thin films. The average reflectance value of CeO2 thin films obtained using these values was 14.32%, while the minimum reflectance value was 0.62%. When the optimum reflectance values were applied to c-Si solar cells with Afors-het simulation, it was observed that the efficiency value increased from 11.57 to 16.89% compared to the uncoated solar cell.

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Acknowledgements

This research was supported by TUBITAK (The Scientific and Technological Research Council of Turkey) under project number 121C375. The authors also thank to Thin Film Laboratory of Recep Tayyip Erdogan University Faculty of Engineering and Architecture, where the thin films were produced.

Author contributions

IK conducted the experiments, analyzed the data and drafted/revised/finalized the paper. MT supervised the research, analyzed the data.

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Correspondence to İmran Kanmaz.

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Kanmaz, İ., Tomakin, M. Anti-reflective effect of CeO2 thin films produced by sol-gel method on crystalline silicon solar cells. J Sol-Gel Sci Technol 108, 361–367 (2023). https://doi.org/10.1007/s10971-023-06161-3

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