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Novel Staggered Arrangement Array of Micro-Disk Cavity Semiconductor Lasers

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Journal of Russian Laser Research Aims and scope

Abstract

A micro-disk cavity semiconductor laser has unique advantages in chip light sources and is particularly important to realize high integration, high power, and parallel optical output. Based on the directional output characteristics of an InGaAs/InAlAs quantum cascade limaçon-shaped micro-disk cavity laser with a deformation factor of 0.42, we demonstrate a novel staggered arrangement array. Furthermore, we study the thermal characteristics of the novel staggered arrangement array of a micro-disk cavity laser with a radius of 100 μm, using the ANSYS finite element analysis method. We determine that array distribution with a horizontal distance of 500 μm and a longitudinal distance of 280 μm has acceptable heated dissipation characteristics. The device performance results show that the staggered arrangement array device has good directional output properties, with a parallel far-field divergence angle of 71°. The peak output power of the staggered arrangement array device is 45.5 mW, which is 4.3 times of a single device.

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Authors and Affiliations

  1. State Key Laboratory on High-Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, China

    Jinghang Yang, Changling Yan, Chao Pang, Yunzhen Yue & Ran Qian

Authors
  1. Jinghang Yang
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  2. Changling Yan
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  3. Chao Pang
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  4. Yunzhen Yue
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  5. Ran Qian
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Correspondence to Changling Yan.

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Yang, J., Yan, C., Pang, C. et al. Novel Staggered Arrangement Array of Micro-Disk Cavity Semiconductor Lasers. J Russ Laser Res 43, 354–360 (2022). https://doi.org/10.1007/s10946-022-10059-w

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  • DOI: https://doi.org/10.1007/s10946-022-10059-w

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