Abstract
Perovskite light-emitting diodes (PeLEDs) have attracted considerable attention in optoelectronic devices due to their excellent performance. Here, the performance of PeLEDs was improved by utilizing l-phenylalanine-doped PEDOT:PSS as hole transport layer (HTL). The optimal device with l-phenylalanine doped HTL shows a maximum luminance of 3800 cd/m2 and a maximum external quantum efficiency of 2.80%. Compared with the control device using pure PEDOT:PSS HTL, the maximum luminance was increased by 90%, and the maximum external quantum efficiency was increased by 154%, respectively. This is mainly due to the fact that PEDOT:PSS with l-phenylalanine doping optimizes the morphology of the perovskite film and suppresses the exciton quenching at the HTL/perovskite interface. In addition, moderate addition of l-phenylalanine can enhance the hole injection capability of HTL. These experimental results provide proof of amino acid-modified PEDOT:PSS as HTL and a basis for improving the performance of PeLEDs.
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Acknowledgements
We gratefully acknowledge the National Natural Science Foundation of China (Grant No. 12275074), the Green Industry Technology Leadership Program of Hubei University of Technology (Grant No. XJ2021003702), the Graduate Student Research and Innovation Program of Hubei University of Science and Technology (Grant No. 2022108), and the Open Funds of Key Laboratory of Efficient Utilization of Solar Energy and Operation and Control of Energy Storage System in Hubei Province (Grant Nos. HBSEES201801 and HBSEES201705).
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All authors made significant contributions to the thesis report. Thesis writing, material synthesis, and device preparation were performed by AYS. HHS and SP performed data testing and analysis. ZH and WZY assisted with the experiments. ZYM and MF contributed in supervision, analysis, editing, and communication.
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Ai, Y., He, H., Shen, P. et al. Improved performance of quasi-two dimensional perovskite light-emitting diodes with l-phenylalanine-doped PEDOT:PSS hole transport layer. J Mater Sci: Mater Electron 35, 740 (2024). https://doi.org/10.1007/s10854-024-12461-3
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DOI: https://doi.org/10.1007/s10854-024-12461-3