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Confirmation of charge carriers’ types based on HOMO-LUMO positions in the active layer of a WORM memory device

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Abstract

In this communication, we have tried to explain the experimental observation of the flow of opposite charge carriers (electrons and holes) in a Write Once Read Many times (WORM) type memory device’s resistive switching phenomena. A thiazine dye namely Toluidine Blue O (TBO) was used as the active layer. Bottom and top electrodes were taken as ITO and Au, respectively. The positions of HOMO and LUMO levels in TBO have been shown to play a crucial role in the flow of charge carriers upon applying a bias voltage. Depending on the positive and negative sweep voltages, the charge carriers have been exchanged. This confirmation was made on the basis of theoretical model, Density functional theory (DFT), and temperature-dependent studies. The devices also showed excellent retention capacity for more than 6 h. Memory window was having of the order of 103 and read endurance of greater than 3300 cycles. The device yield showed almost 80% and an excellent device stability of 90 days.

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The research data those are included in this present work that is the manuscript and in the supplementary material will be made available on reasonable request to the corresponding author.

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Funding

SAH is grateful to DST, for financial support to carry out this research work through DST, Govt. of India project ref. No. CRG/2021/004073. The authors are also grateful to UGC, Govt. of India for financial support to carry out this research work through financial assistance under UGC–SAP program 2016.

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Authors and Affiliations

  1. Thin Film and Nanoscience Lab, Department of Physics, Tripura University, Suryamaninagar, Agartala, Tripura, 799022, India

    Shyam Kumar Bhattacharjee, Syed Arshad Hussain & Debajyoti Bhattachrjee

  2. Department of Physics, Ambedkar College, Unakoti, Fatikroy, Tripura, 799290, India

    Chandan Debnath

  3. Department of Physics, Jadavpur University, Jadavpur, Kolkata, 700032, India

    Pabitra Kumar Paul

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DB designed the work. Research scholar SKB did all the experimental works. PKP did some theoretical calculations. SKB and DB analysed and wrote the manuscript with valuable inputs from CD, and SAH.

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Correspondence to Debajyoti Bhattachrjee.

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Bhattacharjee, S.K., Debnath, C., Hussain, S.A. et al. Confirmation of charge carriers’ types based on HOMO-LUMO positions in the active layer of a WORM memory device. J Mater Sci: Mater Electron 35, 143 (2024). https://doi.org/10.1007/s10854-023-11840-6

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