Abstract
A simple and low-cost Cu foam/Sn composite preform was proposed for the low-temperature interconnection of high-power devices. The composite preform was prepared by pressing a Cu foam as the skeleton between two Sn foils as low-melting point metals with different pressures. The composite preform retains the high re-melting temperature superiority of transient liquid phase (TLP) bonding, as well as shortens the reflow time of intermetallic compounds (IMCs). The microstructures of the bondlines and the electrical and mechanical properties of the composite preform pressed at different pressures were studied. After sintering at 260 °C, the interconnection layer becomes denser with the increasing pressures of composite preform, and the bondline is composed of mainly Cu6Sn5, Cu3Sn and Ag3Sn phase. When the pressure of the composite preform increases from 200 to 400 MPa, the electrical resistivity decreases and the shear strength of bonded joints increases. At the pressure of 400 MPa, the electrical resistivity and the shear strength are 8.83 μΩ cm and 36.4 MPa, respectively, which are far better than the traditional Sn performs. Furthermore, two fracture failure models were obtained to analyze the breaking mechanism of the bonding joints under different sintering temperatures.
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Acknowledgements
The authors sincerely thank the facility support of Analytical and Testing Center of Huazhong University of Science and Technology for SEM, TG-DSC and EDS measurements. This work was financially supported by the National Natural Science Foundation of China (51775219, 51805196) and the Fundamental Research Funds for Central Universities (2017JYCXJJ006).
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JL: experimental design, write the manuscript. QW and JL: participate in the experimental process, data curation. YM: give some advices to this work. YP and MC: supervision, review and edit, be related to the funding projects. All authors have read and approved the manuscript.
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Liu, J., Wang, Q., Liu, J. et al. Facile preparation of Cu foam/Sn composite preforms for low-temperature interconnection of high-power devices. J Mater Sci: Mater Electron 32, 12547–12556 (2021). https://doi.org/10.1007/s10854-021-05890-x
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DOI: https://doi.org/10.1007/s10854-021-05890-x