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Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure

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Abstract

TE/CdZnTe/Pt/Ti/SiO2/Si structures (top electrode TE = Au, Pt, Al, Ti and Cu) were fabricated by magnetron sputtering and thermal evaporation. Bipolar resistive switching behavior was observed in TE/CdZnTe/Pt/Ti/SiO2/Si structure when TE is Al, Ti or Cu, but Pt or Au as TE in TE/CdZnTe/Pt device showed no resistive switching. The interfacial layer-dominated model was proposed to explain the presence of resistive switching behavior in TE/CdZnTe/Pt device due to oxidizable electrodes. The role of the CdZnTe film is a series resistor after the forming process. Space charge-limited current model was used to analyze the conduction mechanism and ~ 1019 cm−3 trap density in the interfacial layer was calculated by fitting the current–voltage curve. The device properties including voltage parameter distribution, retention property and endurance property were tested, respectively. The Al/CdZnTe/Pt/Ti/SiO2/Si structure has a good potential as resistive switching random access memory with over 103 ON/OFF ratio and at least 103 s retention time.

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Funding

This work was financially supported by the National Key Research and Development Program of China with the Grant No. 2016YFF0101301, National Natural Science Foundation of China with the Grant No. 61874089 and Major scientific and technological innovation projects in Shandong Province with the Grant No. 2019JZZY021001.

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Authors and Affiliations

  1. State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an, China

    Aoqiu Wang, Jiakui Zhang, Gangqiang Zha, Lingyan Xu & Wanqi Jie

  2. Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an, China

    Aoqiu Wang, Jiakui Zhang, Gangqiang Zha, Lingyan Xu & Wanqi Jie

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  1. Aoqiu Wang
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  2. Jiakui Zhang
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Correspondence to Lingyan Xu.

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Wang, A., Zhang, J., Zha, G. et al. Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure. J Mater Sci: Mater Electron 32, 10809–10819 (2021). https://doi.org/10.1007/s10854-021-05739-3

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