Abstract
Reactions of metallurgical-grade silicon (MG-Si) with gaseous hydrogen bromide (HBr) has been monitored by means of online gas chromatography in a flow reactor system. The formation of tri-bromosilane started to occur at 380 °C, accompanied by the consumption of HBr. The conversion of HBr into bromosilanes increased with an increase in reaction temperature and reached a maximum at 440 °C. An increase of the HBr concentration in a HBr-N2 mixed gas led to an increase in the consumption of MG-Si, while it reduced the selectivity of the tri-bromosilane formation. An increase in total flow rate of the reaction gas caused a dramatic decrease in the HBr conversion and enhanced the selectivity of the tri-bromosilane formation. The rate constant for overall bromination reaction at 400 °C was measured to be 0.46 s−1. Concentrations of impurities in the product were much less than those in MG-Si. Moreover, kerf loss silicon was subjected to the bromination reaction under the optimized conditions.
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Acknowledgements
This research was supported by Yamaguchi Green Materials Cluster Initiative from the Ministry of Education, Culture, Sports, Science and Technology, Japan. We are very grateful to Prof. S. Sakuragi, Prof. Y. Sakata, and Prof. M. Yoshimoto for their comments and advices.
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Tomono, K., Okamura, Y., Furuya, H. et al. Selective hydrobromination of metallurgical-grade silicon in a flow reactor system. J Mater Sci 47, 3227–3232 (2012). https://doi.org/10.1007/s10853-011-6160-x
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DOI: https://doi.org/10.1007/s10853-011-6160-x