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Physical analysis of β-Ga2O3 gate-all-around nanowire junctionless transistors: short-channel effects and temperature dependence

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Abstract

In this study, we analyze a β-Ga2O3 gate-all-around nanowire junctionless transistor (β-GAA-JLT) in accumulation mode. The performances are investigated by considering quantum effects, and the results are compared with those of a silicon gate-all-around nanowire junctionless transistor (Si-GAA-JLT) device. We illustrate that the ultra-scaled β-Ga2O3 field effect transistors (FETs) perform better in terms of short-channel effects (SCEs) and temperature dependence than the silicon material in accumulation mode. Because of the lower natural length of Ga2O3 versus silicon and higher electrostatic integrity, SCEs are improved versus conventional junctionless silicon devices. We also present that the proposed structure has superior results including a higher depletion region, lower self-heating effect (SHE), and greater immunity against SCEs versus Si-GAA-JLT. The fabrication flow process of the β-GAA-JLT is investigated.

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  1. Electrical Engineering Department, Semnan University, Semnan, Iran

    Aida Motamedi, Ali A. Orouji & Dariush Madadi

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  1. Aida Motamedi
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Correspondence to Ali A. Orouji.

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Motamedi, A., Orouji, A.A. & Madadi, D. Physical analysis of β-Ga2O3 gate-all-around nanowire junctionless transistors: short-channel effects and temperature dependence. J Comput Electron 21, 197–205 (2022). https://doi.org/10.1007/s10825-021-01837-x

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