Conclusions
The effect of alkalis, slag, and carbon monoxide on silicon carbide and nitride was studied at elevated temperatures up to 1550°C. It was established that silicon carbide is destructed most rapidly at 1200°C under the action of the investigated factors. The properties of silicon nitride virtually do not change on heating up to 1400°C in the presence of carbon monoxide; one observes a slight decrease in the nitrogen content of the system only at 1550°C and an increase in the silicon content in the 1200–1550°C range due to the dissociation of Si3N4 and the formation of Si2ON2.
At 1200 °C, carbon monoxide and alkalis significantly influence the property variation of the silicon carbide refractories containing a silicon nitride-based binder only during the first 2 h of holding; this is confirmed by the abrupt decrease of the open porosity and the apparent density during this period. Further increase in the holding period up to 16 h does not have a significant effect on the variation of the properties of the products owing to the protective glassy coating formed on the refractory surface as a result of partial oxidation of SiC. Our studies confirmed that the silicon carbide refractories containing a silicon nitride binder possess a high degree of stability under aggressive conditions.
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Translated from Ogneupory, No. 2, pp. 1–4, February, 1988.
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Pitak, N.V., Fedoruk, R.M., Khmelenko, T.P. et al. Resistance of silicon carbide refractories to the action of carbon monoxide, alkalis, and slag. Refractories 29, 69–73 (1988). https://doi.org/10.1007/BF01386609
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DOI: https://doi.org/10.1007/BF01386609