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Aging improvement of Mn–Zn–Ni–Mg–Al–O high-entropy oxide films

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Abstract

Mn(1.9−x) Zn0.2Ni0.6MgxAl0.3O4 (0 < x < 1) high-entropy oxide films were prepared on silicon substrate. The effects of Mg doping on microstructure, cation distribution, and electrical and aging properties of thin films were investigated. Mg2+ mainly replaces Mn2+ in the tetrahedron and does not affect the distribution of other trivalent cations in the octahedron. The thermal constant of the film varies from 2989.5 to 2176.6 K with the change of Mg/Mn ion content. Aging coefficient varies from 10.47 to 9.07%. The aging improvement of the films is ascribed to the multiple mechanisms of cationic sluggish diffusion as well as the variance in film grain size.

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Data availability

The data used to support the findings of this study are available from the corresponding author upon request.

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Funding

Thanks for the Key Industry Innovation Chain Project of Shaanxi Province (2020ZDLGY12-02) as well as the National Natural Science Foundation of China (Grant No.: 51931005, 52171048, and 51571163) for the financial supports.

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Authors and Affiliations

  1. School of Science, Xi’an University of Posts & Telecommunications, Xi’an, 710121, China

    Wei Ren, Yu-Xin Han, Sai-Rui Li & Xian-Hai Liu

  2. Northwestern Polytechnical University, Xi’an, 710072, China

    Wei Ren, Wei-Li Wang & Xiang Weng

Authors
  1. Wei Ren
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  2. Yu-Xin Han
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  3. Wei-Li Wang
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  4. Sai-Rui Li
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  6. Xiang Weng
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Contributions

All the authors contributed to the concept and design of the study. The preparation and electrical aging characteristics of Mn-based high-entropy thermosensitive thin films were reported. The first draft of the manuscript was written by HYX, and all the authors commented on the previous version of the manuscript. All authors read and approved the final manuscript.

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Correspondence to Wei Ren or Wei-Li Wang.

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Ren, W., Han, YX., Wang, WL. et al. Aging improvement of Mn–Zn–Ni–Mg–Al–O high-entropy oxide films. J Mater Sci: Mater Electron 35, 40 (2024). https://doi.org/10.1007/s10854-023-11853-1

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