Abstract
The structure and bias optimization techniques for the radio frequency (RF) stability of silicon nanowire transistor is presented. The RF parameters are extracted using device simulation. The device stability is obtained for various bias conditions and geometry. The impact of gate contact alignment and silicon radius on RF stability performance of Silicon Nanowire Transistor is presented and guidelines are provided for improved stability response.
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Sivasankaran, K., Mallick, P.S. (2023). Radio Frequency Stability Performance of Silicon Nanowire Transistor. In: Multigate Transistors for High Frequency Applications. Springer Tracts in Electrical and Electronics Engineering. Springer, Singapore. https://doi.org/10.1007/978-981-99-0157-9_6
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DOI: https://doi.org/10.1007/978-981-99-0157-9_6
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