Novel Wide Band Gap Semiconductor Devices for Ionizing Radiation Detection

Abstract

We describe the fabrication and characterization of novel ionizing radiation detectors using wide band gap semiconductors like GaN and synthetic diamond. We have made interdigitated GaN metal-semiconductor-metal (MSM) detector with finger spacing of 8 $\upmu$m with Schottky junctions on GaN epitaxial layers. Synthetic diamond grown by microwave plasma-assisted chemical vapor deposition (CVD) is a high-speed detector with applications in high radiation environment. In this paper, we present measurements of current-voltage (I-V) characteristics, charge transport with transient current technique (TCT) and charge collection efficiency measured on GaN and single crystal CVD diamond prototype detectors.