Abstract
Silicon carbide (SiC) MOSFET has the characteristics of low turn-on threshold voltage and weak reverse withstand voltage capability, it is very easy to cause bridge-arm crosstalk problems. Based on the generation mechanism of bridge-arm crosstalk, this paper compares several different bridge-arm crosstalk suppression circuits. And on the basis of active suppression circuit, the study designed a new type of autonomous crosstalk suppression circuit, and used LTspice software to compare the several main crosstalk suppression circuits by simulation, which proved the new type of autonomous crosstalk suppression circuit proposed in this article is more efficient and reliable.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Micha, B., Marcin, H.: Effects of space vector modulation strategy on hybrid (Si-SiC) inverter losses. Arch. Electr. Eng. 61(1), 69–75 (2012)
Zhao, B., Qin, H., Wen, J., et al.: Characteristics, applicationsand challenges of SiC power devices for future powerelectronic system. In: International Conference on Power Electronics and Motion Control, pp. 23–29. IEEE, Harbin, China (2012)
Maswood, A.I., Vu, P.L.A., Rahman, M.A.: Silicon carbide based inverters for energy efficiency. In: 2012 IEEE Transportation Electrification Conference and Expo, ITEC 2012 (2012)
Kohei, M., Yusuke, Z., Yoshinori, M., Satoshi, T., Shinji, S.: A compact 5-nH one-phase-leg SiC power module for a 600V–60A-40W/cc inverter. Mater. Sci. Forum 717–720, 1233–1236 (2012)
Xu, F., et al.: Development of a SiC JFET-based six-pack power module for a fully integrated inverter. IEEE Trans. Power Electron. 28(3), 1464–1478 (2013)
Wrzecionko, B., Bortis, D., Kolar, J.W.: A 120 \(^{\circ }\)C ambient temperature forced air-cooled normally-off SiC JFET automotive inverter system. IEEE Trans. Power Electron. 29(5), 2345–2358 (2014)
Qi, F., Xu, L., Zhao, G., et al.: Transformer isolated gate drive with protection for SiC MOSFET in high temperature application. In: Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, pp. 5723–5728. IEEE (2014)
Guo, S., Zhang, L., Lei, Y.: 3.38 Mhz operation of 1.2 k V Si C MOSFET with integrated ultra-fast gate drive. In: Wide Bandgap Power Devices and Applications (Wi PDA), IEEE 3rd Workshop on. IEEE 2015, pp. 390–395 (2015)
Muhsen, H., Lutz, J., Hiller, S.: Design and evaluation of gate drivers of SiC MOSFET. In: PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. VDE, pp. 1–8 (2015)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2022 The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
About this paper
Cite this paper
Ou, Y., Jia, L., Song, H., Guo, Y., Han, J. (2022). Research on Bridge-Arm Crosstalk Suppression Circuit Based on SiC MOSFET. In: Jia, Y., Zhang, W., Fu, Y., Yu, Z., Zheng, S. (eds) Proceedings of 2021 Chinese Intelligent Systems Conference. Lecture Notes in Electrical Engineering, vol 805. Springer, Singapore. https://doi.org/10.1007/978-981-16-6320-8_35
Download citation
DOI: https://doi.org/10.1007/978-981-16-6320-8_35
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-16-6319-2
Online ISBN: 978-981-16-6320-8
eBook Packages: Intelligent Technologies and RoboticsIntelligent Technologies and Robotics (R0)