Abstract
In this chapter, we have discussed some important parameters of Spintronics, such as spin polarization, spin filter effect, spin injection, spin accumulation, spin relaxation, and spin extraction. Passive spintronic devices, such as Spin Valves, have also been discussed in this chapter. In this chapter, we have also presented different kinds of spin relaxation, in both time and space, of conduction electrons in metals and semiconductors. Such spin relaxation mechanism poses limitations to the performance of most of the spintronic devices. In this direction, four primary spin relaxation mechanisms, such as the D’yakonov–Perel, the Elliott–Yafet, the Bir–Aronov–Pikus, and hyperfine interactions with nuclear spins, have been discussed with the ultimate objective to minimize the spin relaxation rate in spintronic devices, so that they become more robust and useful. We have also discussed Field and Heat-Driven Spintronic Effect, i.e., Spin Hall Effect, Seebeck Effect, and Spin Current Measurement Mechanism.
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Dey, P., Roy, J.N. (2021). Basic Elements of Spintronics. In: Spintronics. Springer, Singapore. https://doi.org/10.1007/978-981-16-0069-2_2
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DOI: https://doi.org/10.1007/978-981-16-0069-2_2
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