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Spin Injection and Detection in Spin Valves with Integrated Tunnel Barriers

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Quantum Materials, Lateral Semiconductor Nanostructures, Hybrid Systems and Nanocrystals

Part of the book series: NanoScience and Technology ((NANO))

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Abstract

In paramagnetic metals, a nonequilibrium spin polarization injected from a ferromagnetic region can be sustained. We give an overview of various possibilities to realize spin injection in all-metal spin-valve devices consisting of two ferromagnetic electrodes and an interconnecting normal metal strip. Contributions to the local and the nonlocal magnetoresistance of such lateral spin valves are discussed. The strong increase of spin-injection efficiency as a consequence of the incorporation of tunnel barriers into spin valves is understood in the framework of a diffusive theory that includes spin diffusion, spin relaxation, and spin precession.

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Author information

Authors and Affiliations

  1. Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstrasse 11, 20355, Hamburg, Germany

    Jeannette Wulfhorst, Andreas Vogel & Nils Kuhlmann

  2. Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstraße 11, 20355, Hamburg, Germany

    Ulrich Merkt & Guido Meier

Authors
  1. Jeannette Wulfhorst
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  2. Andreas Vogel
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  3. Nils Kuhlmann
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  4. Ulrich Merkt
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  5. Guido Meier
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Correspondence to Jeannette Wulfhorst .

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Editors and Affiliations

  1. FB Physik, Inst. Angewandte Physik, Universität Hamburg, Jungiusstr. 11, Hamburg, 20355, Germany

    Detlef Heitmann

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Wulfhorst, J., Vogel, A., Kuhlmann, N., Merkt, U., Meier, G. (2010). Spin Injection and Detection in Spin Valves with Integrated Tunnel Barriers. In: Heitmann, D. (eds) Quantum Materials, Lateral Semiconductor Nanostructures, Hybrid Systems and Nanocrystals. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-10553-1_13

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