Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
S. M. Rossnagel, J. J. Cuomo, and W. D. Westwood, Handbook of Plasma Processing Technology, Noyes Publications, 1990.
M.A. Lieberman and A.J. Lichtenberg, Principles of Plasma Discharges and Materials Processing, John Wiley and Sons, New York, 1994.
M. Meyyappan, editor, Computational Modeling in Semiconductor Processing Artech House, 1994.
M. Dalvie and K. F. Jensen, J. Vac. Sci. Technol. A, 8, 1648 (1990).
S.-K. Park and D. J. Economou, J. Electrochem. Soc. 137, 2624 (1990).
D. B. Graves and K. F. Jensen, IEEE Trans. Plasma Sci. PS-14, 78 (1986).
S.-K. Park and D. J. Economou, J. Appl. Phys. 68, 3904 (1990).
A. D. Richards, B. E. Thompson, and H. H. Sawin, Appl. Phys. Lett. 50, 492 (1987).
J.-P. Boeuf and L. C. Pitchford, IEEE Trans. Plasma Sci. 19, 286 (1991).
Y. Oh, N. Choi and D. Choi, J. Appl. Phys. 67, 3264 (1990).
M. Meyyappan and T. R. Govindan, J. Vac. Sci. Technol. A 10, 1344 (1992).
A. P. Paranjpe, J. P. McVittie, S. A. Self, J. Vac. Sci. Technol. A 8, 1654 (1990).
G. R. Misium, A. M. Lichtenberg and M. A. Lieberman, J. Vac. Sci. Technol. A 7 1007 (1989).
W. N. G. Hitchon, T. J. Sommerer and J. E. Lawler, IEEE Trans. Plasma Phys. 19, 113 (1991).
V. A. Feoktistov, A, M. Popov, O. B. Popovicheva, A. T. Rakhimov, T. V. Rakhimova, and E. A. Volkova, IEEE Trans. Plasma Sci. 19, 163 (1991).
N. Sato and H. Tagashira, IEEE Trans. Plasma Sci. PS-19, 102 (1991).
E. Gogolides and H. H. Sawin, J. Appl. Phys. 72, 3971 (1992).
T. J. Sommerer and M. J. Kushner, J. Appl. Phys. 71, 1654 (1991).
D. P. Lymberopoulos and D. J. Economou, J. Appl. Phys. 73, 3668 (1993).
M. S. Barnes, T. J. Cotler and M. E. Elta, J. Comp. Phys. 77, 53 (1988).
M. H. Wilcoxson and V. I. Manousiouthakis, J. Comp. Phys. 115, 376 (1994).
D. P. Lymberopoulos and D, J. Economou, Appl. Phys. Lett. 63, 2478 (1993).
D. P. Lymberopoulos and D. J. Economou, J. Vac. Sci. Technol. A 12, 1229 (1994).
P. L. G. Ventzek, T. J. Sommerer, R. J. Hoekstra, and M. J. Kushner, Appl. Phys. Lett. 62, 3247 (1993).
D. P. Lymberopoulos and D. J. Economou, J. Res. Natl. Inst. Standards Technol., 100, 473 (1995).
D. P. Lymberopoulos and D. J. Economou, IEEE Trans. Plasma Sci. 23, 573 (1995).
J. D. Bukowski and D. B. Graves, J. Appl. Phys. 80, 2614 (1996).
P. L. G. Ventzek, R. J. Hoekstra and M. J. Kushner, J. Vac. Sci. Technol. B 12, 461 (1994).
P. L. G. Ventzek, M. Grapperhaus and M. J. Kushner, J. Vac. Sci. Technol. B 12, 3118 (1994).
M. J. Kushner, W. Z. Collison, M. J. Grapperhaus, J. P. Holland, and M. S. Barnes, J. Appl. Phys. 80, 1337 (1996).
M. Dalvie, M. Surendra, G. S. Selwyn, Appl. Phys. Lett. 62, 3207 (1993).
F. Young and C.-H. (John) Wu, IEEE Trans. Plasma Sci. 21, 312 (1993).
J.-P. Boeuf and L. C. Pitchford, Phys. Rev. E, accepted.
M. H. Wilcoxson and V. I. Manousiouthakis, in Proceedings of the First International Symposium on Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing, 95-4, edited by M. Meyyappan, D. J. Economou, and S. W. Butler, The Electrochemical Society Inc., 1995.
J. D. P. Passchier and W. J. Goedheer, J. Appl. Phys. 74, 3744 (1993).
Y. Yang and H. Wu, J. Appl. Phys. 80, 3699 (1996).
A. M. Popov, A. T. Rakhimov, and T. V. Rakhimova, Plasma. Phys. Rep. 19, 651 (1993).
C. K. Birdsall, IEEE Trans. Plasma Sci. 19, 65 (1991).
D. J. Economou, T. Bartel, R. S. Wise and D. P. Lymberopoulos, IEEE Trans. Plasma Sci. 23, 581 (1995).
M. Surendra, Plasma Sources Sci. & Technol. 4, 56 (1995).
U. Kortshagen, I. Pukropski, and L. D. Tsendin, Phys. Rev. E 51, 6063 (1995).
R.P. Brinkman, R.F. Furst, C. Werner, and M. Hierlemann, in Proceedings of the First International Symp. on Control, Diagnostics, and Modeling in Semiconductor Manufacturing edited by M. Meyyappan, D.J. Economou, and S.W. Butler, The Electrochemical Society, (1995).
A. A. Paranjpe, J. Vac. Sci. Technol. A 12(4), 1221 (1994).
R. S. Wise, D. P. Lymberopoulos, and D. J. Economou, Appl. Phys. Lett. 68, 2499 (1996).
D. J. Economou, R. S. Wise and D. P. Lymberopoulos, in Plasma Processing XI, Vol. 96-12, edited by G. Mathad and M. Meyyappan, The Electrochemical Society Inc., 1996.
I. B. Bernstein and T. Holstein, Phys. Rev. 94, 1475 (1954).
L. D. Tsendin, Sov. Phys. JETP 39, 805 (1974).
V. I. Kolobov and V. A. Godyak, IEEE Trans. Plasma Sci. 23, 503 (1995).
V. I. Kolobov and W. N. G. Hitchon, Phys. Rev. E 52, 972 (1995).
V. I. Kolobov, D. F. Beale, L. J. Mahoney and A. E. Wendt, Appl. Phys. Lett. 65, 537 (1994).
L. D. Tsendin, Sov. Phys. Tech. Phys. 22, 925 (1977).
P. Jiang and D. J. Economou, J. Appl. Phys. 73, 8151 (1993).
M. Capitelli, C. Gorse, R. Winkler, and J. Wilhelm, Plasma Chem. Plasma Process 8, 399 (1988).
J. Hopwood, Plasma Sources Sci. Technol. 1, 109 (1992).
J. H. Keller, J. C. Foster, and M. S. Barnes, J. Vac. Sci. Technol. A, 11, 2487 (1993).
D. P. Lymberopoulos, V. Kolobov, and D. J. Economou, submitted to J. Vac. Sci. Technol.
T. E. Nitschke and D. B. Graves, IEEE Trans. Plasmas Sci. 23, 717 (1995).
V. I. Kolobov, G. J. Parker, and W. N. G. Hitchon, Phys. Rev. E, 53, 1110 (1996).
R. A. Stewart, P. Vitello and D. B. Graves, J. Vac. Sci. Technol. B 12, 478 (1994).
P. N. Wainman, M. A. Lieberman, A. J. Lichtenberg, R. A. Stewart, and C. Lee, J. Vac. Sci. Technol. A 13, 2464 (1995).
G. Dipeso, V. Vahedi, D. W. Hewett, and T. D. Rognlien, J. Vac. Sci. Technol. 12, 1387 (1994).
V. Vahedi, M. A. Lieberman, G. DiPeso, T. D. Rognlien, and D. Hewett, J. Appl. Phys. 78, 1446 (1995).
S. Rauf and M. J. Kushner, J. Appl. Phys. 81, 5966 (1997).
M. J. Grapperhaus and M. J. Kushner, J. Appl. Phys. 81, 569 (1997).
V. I. Kolobov, D. P. Lymberopoulos, and D. J. Economou, Phys. Rev. E 55, 3408 (1997).
V. I. Kolobov and D. J. Economou, Plasma Sources Sci. Technol. 6, 1 (1997).
Dai and C.H. (John) Wu, IEEE Trans. Plasma Sci. 24, 1155 (1996).
G. Mümken and U. Kortshagen, J. Appl. Phys. 80 6639 (1996).
P. A. Miller, G. A. Hebner, K. E. Greenberg, P. D. Pochan, and B. P. Aragon, J. Res. Natl. Inst. Standards Technol. 100, 427 (1995).
G. A. Hebner, J. Vac. Sci. Technol. A 14, 2158 (1996).
R. S. Wise, Inductively Coupled Plasma Reactors: Modeling, Simulation, and Experimental Validation, Ph.D. Dissertation, University of Houston (1996).
N.L. Bassett and D.J. Economou, J. Appl. Phys. 75(4), 1931 (1994).
K. Greenberg and G. A. Hebner, J. Appl. Phys. 73, 8126 (1993).
M. Tuszewski and J. A. Tobin, J. Vac. Sci. Technol. A 14, 1096 (1996).
E. Meeks and J. Shon, personal communication, Sandia National Labs, Livermore, CA.
G. S. Hwang and K. Giapis, J. Appl. Phys. 81, 3433 (1997).
D. J. Economou, S.-K. Park, and G. Williams, J. Electrochem. Soc. 136, 188 (1989).
A. D. Bailey III, M. C. M. van de Sanden, J. A. Gregus, and R. A. Gottscho, J. Vac. Sci. Technol. B 13 92 (1995); see also erratum in J. Vac. Sci. Technol. B 15, 373 (1997).
L.D. Tsendin Sov. Phys. Tech. Phys. 22, 925 (1977).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2002 Kluwer Academic Publishers
About this chapter
Cite this chapter
Economou, D.J., Feldsien, J., Wise, R.S. (2002). Transport and Reaction in Inductively Coupled Plasmas for Microelectronics. In: Kortshagen, U., Tsendin, L.D. (eds) Electron Kinetics and Applications of Glow Discharges. NATO Science Series: B, vol 367. Springer, Boston, MA. https://doi.org/10.1007/0-306-47076-4_22
Download citation
DOI: https://doi.org/10.1007/0-306-47076-4_22
Publisher Name: Springer, Boston, MA
Print ISBN: 978-0-306-45822-4
Online ISBN: 978-0-306-47076-9
eBook Packages: Springer Book Archive