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Organic Memristive Device Based on Polyaniline Film Prepared by Spin Coating

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Abstract

Thin polyaniline films for organic memristors were prepared by spin coating for the first time. The preparation condition effects on morphology and conductivity of the made-up films were studied. The fabricated films were used for assembling organic memristive devices. Current–voltage characteristics of the devices show hysteresis loop and resistive switching behavior under changing bias voltage, what allows their application as synapse-like elements. Found properties of these devices prove the spin-coating technique to be suitable for organic memristive device preparation. It is potentially able to become a simple, cheap, and scalable technology for mass production of polyaniline-based organic memristive devices.

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Acknowledgments

This work was financially supported by the Russian Foundation for Basic Research (15-29-01324) and Russian Federation President’s grant for Support of Young Scientists (МК-5779.2015.3) in part of the development and formation of memristive devices and analysis of results. The measurements were done on the equipment of the Resource centers of Complex of NBICS-technologies of Kurchatov Institute.

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Authors and Affiliations

  1. National Research Centre “Kurchatov Institute”, bld. 1, Akademika Kurchatova pl., Moscow, 123182, Russia

    D. A. Lapkin, A. N. Korovin, V. A. Demin, A. V. Emelyanov & S. N. Chvalun

  2. Moscow Institute of Physics and Technology (State University), bld. 9, Institutskiy per., Dolgoprudny, Moscow region, 141700, Russia

    D. A. Lapkin, V. A. Demin & A. V. Emelyanov

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  1. D. A. Lapkin
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  2. A. N. Korovin
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  3. V. A. Demin
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  4. A. V. Emelyanov
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  5. S. N. Chvalun
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Correspondence to A. N. Korovin.

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Lapkin, D.A., Korovin, A.N., Demin, V.A. et al. Organic Memristive Device Based on Polyaniline Film Prepared by Spin Coating. BioNanoSci. 5, 181–184 (2015). https://doi.org/10.1007/s12668-015-0177-6

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  • DOI: https://doi.org/10.1007/s12668-015-0177-6

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