Skip to main content
Log in

Joule-Heating-Induced Damage in Cu-Al Wedge Bonds Under Current Stressing

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

Copper wires are increasingly used to replace gold wires in wire-bonding technology owing to their better electrical properties and lower cost. However, not many studies have been conducted on electromigration-induced failure of Cu wedge bonds on Al metallization. In this study, we investigated the failure mechanism of Cu-Al wedge bonds under high current stressing from 4 × 104 A/cm2 to 1 × 105 A/cm2 at ambient temperature of 175°C. The resistance evolution of samples during current stressing and the microstructure of the joint interface between the Cu wire and Al-Si bond pad were examined. The results showed that abnormal crack formation accompanying significant intermetallic compound growth was observed at the second joint of the samples, regardless of the direction of electric current for both current densities of 4 × 104 A/cm2 and 8 × 104 A/cm2. We propose that this abnormal crack formation at the second joint is mainly due to the higher temperature induced by the greater Joule heating at the second joint for the same current stressing, because of its smaller bonded area compared with the first joint. The corresponding fluxes induced by the electric current and chemical potential difference between Cu and Al were calculated and compared to explain the failure mechanism. For current density of 1 × 105 A/cm2, the Cu wire melted within 0.5 h owing to serious Joule heating.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. W. Wu, M. Held, P. Jacob, P. Scacco, and A. Birolini, in Power Semiconductor Devices and ICs, Proceedings of 1995 International Symposium, (IEEE, 1995), pp. 443–448.

  2. H. Xu, C. Liu, V.V. Silberschmidt, S.S. Pramana, T.J. White, Z. Chen, and V.L. Acoff, Intermetallics 19, 1808 (2011).

    Article  Google Scholar 

  3. N.J. Noolu, N.M. Murdeshwar, K.J. Ely, J.C. Lippold, and W.A. Baeslack, J. Mater. Res. 19, 1374 (2004).

    Article  Google Scholar 

  4. H.T. Orchard and A.L. Greer, J. Electron. Mater. 35, 1961 (2006).

    Article  Google Scholar 

  5. E. Zin, N. Michael, S.H. Kang, K.H. Oh, U. Chul, J.S. Cho, J.T. Moon, and C.U. Kim, Electronic Components and Technology Conference, (IEEE, 2009), pp. 943.

  6. H.J. Kim, J.Y. Lee, K.W. Paik, K.W. Koh, J. Won, S. Choe, and Y.J. Park, IEEE Trans. Compon. Packag. Technol. 26, 367 (2003).

    Article  Google Scholar 

  7. H. Xu, C. Liu, V.V. Silberschmidt, S.S. Pramana, T.J. White, Z. Chen, and V.L. Acoff, Acta Mater. 59, 5661 (2011).

    Article  Google Scholar 

  8. C.J. Hang, C.Q. Wang, M. Mayer, Y.H. Tian, Y. Zhou, and H.H. Wang, Microelectron. Reliab. 48, 416 (2008).

    Article  Google Scholar 

  9. Standard, MIL-STD-883G Method 2011.7.

  10. B. Senthil Kumar, S. Mohandass, Ramkumar Malliah, M. Li, K.Y. Song, James, Electronics Packaging Technology Conference (IEEE, 2010), pp. 859–867.

  11. F.W. Wulff, C.D. Breach, and D. Stephan, Electronics Packaging Technology Conference (IEEE, 2004), pp. 348–353.

  12. F.W. Wulff, C.D. Breach, and D. Stephan, Proceedings of SEMICON Conference (2005).

  13. Y. Tian, C. Wang, I. Lum, M. Mayer, J.P. Jung, and Y. Zhou, J. Mater. Process. Technol. 208, 179 (2008).

    Article  Google Scholar 

  14. I. Lum, J.P. Jung, and Y. Zhou, Metall. Mater. Trans. A A36, 1279 (2005).

    Article  Google Scholar 

  15. Y. Takahashi and S. Matsusaka Dhes, Sci. Technol. 17, 435 (2003).

    Google Scholar 

  16. J. Chen, D. Degryse, and P. Ratchev, IEEE Trans. Compon. Packag. Technol. 27, 539 (2004).

    Article  Google Scholar 

  17. C.F. Yu, C.M. Chan, L.C. Chan, and K.C. Hsieh, Microelectron. Reliab. 51, 119 (2011).

    Article  Google Scholar 

  18. M.Y. Guo, C.K. Lin, C. Chen, and K.N. Tu, Intermetallics 29, 155 (2012).

    Article  Google Scholar 

  19. C. Chen, H.-Y. Hsiao, Y.-W. Chang, F.-Y. Ouyang, and K.N. Tu, Mater. Sci. Eng. R 73, 85 (2012).

    Article  Google Scholar 

  20. K.N. Tu, Electronic Thin-Film Reliability (New York, NY: Cambridge University Press, 2010).

    Google Scholar 

  21. W.F. Gale and T.C. Totemeier, Smithells Metals Reference Book (Oxford, UK: Elsevier Butterworth-Heinemann, 2004).

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Fan-Yi Ouyang.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Yang, TH., Lin, YM. & Ouyang, FY. Joule-Heating-Induced Damage in Cu-Al Wedge Bonds Under Current Stressing. J. Electron. Mater. 43, 270–276 (2014). https://doi.org/10.1007/s11664-013-2790-x

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-013-2790-x

Keywords

Navigation