Abstract
The structure composed of a TiO2-Ag grating on the surface of p-GaN layer is proposed and investigated. The performance of light-emitting diodes is enhanced by coupling of localized surface plasmon and quantum wells. In the structure, Ag inserts are covered with TiO2 in p-GaN layer to induce localized surface plasmon. The normalized radiated powers, the normalized loss powers in Ag region, and the electric field distribution of light-emitting diodes with different geometric parameters and wavelengths have been calculated by using COMSOL Multiphysics. The results reveal that the most exciting enhancement is 40 times compared to the intensity without Ag nanoparticles at the wavelength of 460 nm. The designed structure can be applied to developing light-emitting diodes of polarized monochrome blue-light emission.
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Acknowledgements
This work was supported by the Natural Science Foundation of Hebei Province grant no. F2014501150 in China, the Science Research Foundation of Northeastern University at Qinhuangdao under grant no. XNK201502, and the Fundamental Research Funds for the Central Universities grant no. N152303012.
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Li, W., Sha, X., Li, Z. et al. Emission Enhancement of Light-Emitting Diode by Localized Surface Plasmon Induced by Ag Inserts in p-GaN and TiO2-Ag Grating. Plasmonics 12, 1855–1860 (2017). https://doi.org/10.1007/s11468-016-0454-4
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DOI: https://doi.org/10.1007/s11468-016-0454-4