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Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell

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Abstract

GaInP/GaAs dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160°C. The results indicate that the quantum efficiencies of the subcells increase slightly with the increasing temperature. And red-shift phenomena of absorption limit for all subcells are observed by increasing the cell’s work temperature, which are consistent with the viewpoint of energy gap narrowing effect. The short-circuit current density temperature coefficients dJ sc/dT of GaInP subcell and GaAs subcell are determined to be 8.9 and 7.4 μA/cm2/°C from the quantum efficiency data, respectively. And the open-circuit cell voltage temperature coefficients dV oc/dT calculated based on a theoretical equation are −2.4 mV/°C and −2.1 mV/°C for GaInP subcell and GaAs subcell.

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Authors and Affiliations

  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, POB 912, Beijing, 100083, China

    Lei Liu, NuoFu Chen, YiMing Bai, Ming Cui, Han Zhang, FuBao Gao, ZhiGang Yin & XingWang Zhang

  2. National Laboratory of Microgravity, Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100080, China

    NuoFu Chen

Authors
  1. Lei Liu
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  2. NuoFu Chen
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  3. YiMing Bai
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  4. Ming Cui
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  5. Han Zhang
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  6. FuBao Gao
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  7. ZhiGang Yin
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  8. XingWang Zhang
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Correspondence to Lei Liu.

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Liu, L., Chen, N., Bai, Y. et al. Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell. Sci. China Ser. E-Technol. Sci. 52, 1176–1180 (2009). https://doi.org/10.1007/s11431-008-0203-9

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  • DOI: https://doi.org/10.1007/s11431-008-0203-9

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