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Copper phthalocyanine based Schottky diode solar cells

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Abstract

Copper phthalocyanine (CuPc)/Aluminum (Al) Schottky diode solar cells were studied. The thickness of the CuPc layer was varied from 15 nm to 140 nm. Short circuit current densities (Jsc) increased with thickness from 0.042 mA/cm2 at 15 nm to 0.124 mA/cm2 at 120 nm reaching saturation at that level. Open circuit voltages (Voc) increased from 220 mV at 15 nm to 907 mV at 140 nm. Analysis of the current-voltage characteristics indicated that tunneling and interface recombination current mechanisms are important components of the current transport at the CuPc/Al junction.

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Acknowledgements

This work was supported in part by a grant from Kentucky Science & Technology Council Inc. (Grant # KSEF - 148-502-02-27).

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Authors and Affiliations

  1. Center for Nanoscale Science and Engineering, Department of Electrical and Computer Engineering, University of Kentucky, 453 Anderson Hall, Lexington, KY, 40506, USA

    Suresh Rajaputra, Subhash Vallurupalli & Vijay P. Singh

Authors
  1. Suresh Rajaputra
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  2. Subhash Vallurupalli
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  3. Vijay P. Singh
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Correspondence to Vijay P. Singh.

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Rajaputra, S., Vallurupalli, S. & Singh, V.P. Copper phthalocyanine based Schottky diode solar cells. J Mater Sci: Mater Electron 18, 1147–1150 (2007). https://doi.org/10.1007/s10854-007-9152-5

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  • DOI: https://doi.org/10.1007/s10854-007-9152-5

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