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Optoelectronic properties n:CdS:In/p-Si heterojunction photodetector

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Abstract

Optoelectronic properties of CdS:In/Si anisotype heterojunction photodetector fabricated by depositing of polycrystalline CdS and indium doped CdS films used thermal resistive technique on clean monocrystalline p-type silicon substrates are presented. The effect of In diffusion temperature(T d)in CdS layer on the optoelectronic characteristics of these devices has been studied. Two peaks situated at 650 and 800 nm with values of 0.32 and 0.43 A/W, respectively, were observed in the responsivity plot. Other optoelectronics properties such as detectivity, photovoltaic, and response time are also presented.

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Authors and Affiliations

  1. Department of Physics, College of science, Al-Mustansiriya University, P.O. Box 47121, Al-Jadirya, Baghdad, Iraq

    Salwan K. J. Al-Ani

  2. School of Applied Science, University of Technology, Baghdad, Iraq

    Raid A. Ismail

  3. College of Science for Women, Baghdad University, Baghdad, Iraq

    Hana F. A. Al-Ta’ay

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  1. Salwan K. J. Al-Ani
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  2. Raid A. Ismail
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  3. Hana F. A. Al-Ta’ay
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Correspondence to Salwan K. J. Al-Ani.

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Al-Ani, S.K.J., Ismail, R.A. & Al-Ta’ay, H.F.A. Optoelectronic properties n:CdS:In/p-Si heterojunction photodetector. J Mater Sci: Mater Electron 17, 819–824 (2006). https://doi.org/10.1007/s10854-006-0028-x

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  • DOI: https://doi.org/10.1007/s10854-006-0028-x

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