Abstract
In this paper, a SiGe based Back-Contact Back-Junction (BC-BJ) device structure called BC-BJ SiGe solar cell has been proposed. Photo reflection is significantly reduced in UV/Visible spectrum region in case of SiC/Si3N4/SiO2 passivated BC-BJ SiGe solar cell. Result, indicates that presence of SiC play an important role in photoelectric conversion. Ray tracing and finite difference time domain (FDTD) algorithms are used to simulate optoelectronics characteristics of the device. Simulation achieves the barrier height of 0.8 eV for holes at the interface which results in a higher field. The lower interface recombination rate of the order of 1017 cm−3 s−1 has been obtained. The device shows improved photovoltaic parameters. External quantum efficiency >84 % in the spectrum range of 450–700 nm wavelength and more than 80 % in the range of 350–700 nm wavelength is obtained. Further, we obtained the fill-factor (FF) and power conversion efficiency (PCE), 79 %, 17.8 % and 79 %, 14.8 %, using FDTD and ray tracing methods, respectively. All the simulations have been done using atlas and devedit device simulator.
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References
Aberle AG (2010) Surface passivation of crystalline silicon solar cell a review. Prog Photovolt Res Appl 8(5):487–473. http://onlinelibrary.wiley.com/doi/10.1002/1099-159X(200009/10)8:5%3C473::AID-PIP337%3E3.0.CO;2-D/pdf. Accessed 14 May 2015
Franklin E et al (2014) Design, fabrication and characterisation of a 24.4 % efficient interdigitated back contact solar cell. Prog Photovolt Res Appl. doi:10.1002/pip.2556
Atlas user manual (2014) Silvaco, Inc. 4701 Patrick Henry Drive, Bldg. Santa Clara, CA 95054
Cruz-Campa et al (2011) Microsystems enabled photovoltaics: 14.9 % efficient 14 μm thick crystalline silicon solar cell. Sol Energy Mater Sol Cells 95(2):551–558. doi:10.1016/j.solmat.2010.09.015
Deceglie MG, Ferry VE, Alivisatos AP, Atwater HA (2012) Design of nanostructured solar cells using coupled optical and electrical modeling. Nano Lett 12(6):2894–2900. doi:10.1021/nl300483y
Deinega A, Eyderman S, John S (2013) Coupled optical and electrical modeling of solar cell based on conical pore silicon photonic crystals. J Appl Phys 113:224501
Dziewior J, Schmid W (1977) Auger coefficient for highly doped and highly excited silicon. Appl Phys Lett 31(5):346–348
Feldmann F, Bivour M, Reichel C, Hermle M, Glunz SW (2014) Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics. Sol Energy Mater Solar Cells 120:270–274. doi:10.1016/j.solmat.2013.09.017
Garnett E, Yang P (2010) Light trapping in silicon nanowire solar cells. Nano Lett 10:1082–1108. doi:10.1021/nl100161z
Green MA, Emery K, Hishikawa Y, Warta W, Dunlop ED (2014) Solar cell efficiency tables 43. Prog Photovolt Res Appl. doi:10.1002/pip.2452
Hall RN (1952) Electron-hole recombination in germanium. Phys Rev 87(2):387. doi:10.1103/PhysRev.87.387
Jeong S, McGehee MD, Cui Y (2013) All-back-contact ultra-thin silicon nanocone solar cells with 13.7 % power conversion efficiency. Nature Communications 4. Article number 2950:1–7. doi:10.1038/ncomms3950
Kerschaver EV, Beaucarne G (2006) Back-contact solar cells: a review. Prog Photovolts 14(2):107–123. doi:10.1002/pip.657
Ouellete J (2002) Silicon-Germanium Gives Semiconductor the Edge. Am Inst Phys pp 22–25. https://prezi.com/odedrjji90jc/will-hambleton-silicon-germanium-gives-semiconductors-the-edge/
Pandey R, Chaujar R (2014) Enhanced Back-Contact Back-Junction Crystalline Silicon Solar Cell Performance With A Silicon-Carbide (SiC) Based Front Surface Passivation. Int J Adv Technol Eng Sci 2(01):626–630. http://www.ijates.com/images/short_pdf/1412233437_151.pdf. Accessed 14 May 2015
Pandey R, Chaujar R (2014) Front Surface Passivation Scheme for Back-Contact Back-Junction (BC-BJ) Silicon Solar Cell. International Conference on Nanotechnology, Nanocon 014, Pune, India
Povolny H, Agarwal P, Han S, Deng X (2000) Comparison study of a-SiGe solar cells and materials deposited Using different hydrogen dilution. Mat Res Soc Symp Proc 609:6. doi:10.1557/PROC-609-A30.3
Schwartz RJ, Lammert MD (1975) Silicon solar cells for high concentration applications. IEEE International Electron Devices Meeting, pp 350–352. doi:10.1109/IEDM.1975.188896
Selberherr S (1984) Analysis and simulation of semiconductor devices. Springer, Vienna, New York. doi:10.1007/978-3-7091-8752-4
Shockley W, Read WT (1952) Statistics of the recombinations of holes and electrons. Phys Rev 87(5):835–842. doi:10.1103/PhysRev.87.835
Slotboom JW (1977) The pn-product in silicon. Solid State Electron 20(4):279–283. doi:10.1016/0038-1101(77)90108-3
Slotboom JW, de Graaff HC (1976) Measurements of bandgap narrowing in Si bipolar transistors. Solid State Electron 19(10):857–862. doi:10.1016/0038-1101(76)90043-5
Tian B et al (2007) Coaxial silicon nanowires as solar cells and nanoelectronic power sources. Nature 449:885–889. doi:10.1038/nature06181
Tomasi A et al (2014) Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%. IEEE J Photovolt 4(4):1046–1054. doi:10.1109/JPHOTOV.2014.2320586
Wang CC et al (2012) Characterization of nanocrystalline SiGe thin film solar cell with double graded-dead absorption layer. Int J Photoenergy. doi:10.1155/2012/890284
Yang D, Yu X, Li X, Wang P, Wang L (2010) Germanium-doped crystal silicon for solar cells. Solid-State and Integrated Circuit Technology (ICSICT), 10th IEEE International Conference. doi:10.1109/ICSICT.2010.5667855
Acknowledgments
The authors would like to thank Microelectronics Research Lab, Department of Engineering Physics, Delhi Technological University to carry out this work. Rahul Pandey (JRF) acknowledges UGC, Govt. of India for providing fellowship.
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Pandey, R., Chaujar, R. Novel back-contact back-junction SiGe (BC-BJ SiGe) solar cell for improved power conversion efficiency. Microsyst Technol 22, 2673–2680 (2016). https://doi.org/10.1007/s00542-015-2552-1
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DOI: https://doi.org/10.1007/s00542-015-2552-1