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Temperature dependence of band gap ratio and Q-factor defect mode in a semiconductor quaternary alloy hexagonal photonic-crystal hole slab

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Abstract

We present numerical predictions for the photonic TE-like band gap ratio and the quality factors of symmetric localized defect as a function of the thickness slab and temperature by the use of plane wave expansion and the finite-difference time-domain methods. The photonic-crystal hole slab is composed of a 2D hexagonal array with identical air holes and a circular cross section, embedded in a non-dispersive III–V semiconductor quaternary alloy slab, which has a high value of dielectric function in the near-infrared region, and the symmetric defect is formed by increasing the radius of a single hole in the 2D hexagonal lattice. We show that the band gap ratio depends linearly on the temperature in the range 150–400 K. Our results show a strong temperature dependence of the quality factor Q, the maximum (\(Q = 7000\)) is reached at \(T = 350\,\hbox {K},\) but if the temperature continues to increase, the efficiency drops sharply. Furthermore, we present numerical predictions for the electromagnetic field distribution at \(T = 350\,\hbox {K}.\)

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Acknowledgments

The authors thank Dirección de Investigaciones y Desarrollo Tecnológico Universidad Autónoma de Occidente and Vicerrectoría de Investigaciones Universidad del Valle for partial financial support under the Grant Numbers 10INTER-132 and CI:7871, respectively.

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Authors and Affiliations

  1. Departamento de Física, Universidad Autónoma de Occidente, 2790, Cali, Colombia

    R. Sánchez-Cano

  2. Departamento de Física, Universidad del Valle, 25360, Cali, Colombia

    N. Porras-Montenegro

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  1. R. Sánchez-Cano
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  2. N. Porras-Montenegro
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Correspondence to R. Sánchez-Cano.

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Sánchez-Cano, R., Porras-Montenegro, N. Temperature dependence of band gap ratio and Q-factor defect mode in a semiconductor quaternary alloy hexagonal photonic-crystal hole slab. Appl. Phys. A 122, 349 (2016). https://doi.org/10.1007/s00339-016-9906-0

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  • DOI: https://doi.org/10.1007/s00339-016-9906-0

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