Abstract
The growth and nitrogen doping of ZnSe by low pressure organometallic vapor phase epitaxy (OMVPE) have been investigated in a vertical downflow reactor equipped with a laser interferometer for in-situ growth rate measurements, and a microwave plasma cavity for precracking of ammonia for nitrogen doping. Particular emphasis is placed on understanding growth characteristics obtained with H2Se and the new adduct source dimethylzincrtriethylamine (DMZn:NEt3), as compared to those obtained with H2Se and DMZn. At higher temperatures and pressures, growth results obtained with DMZn:NEt3 are similar to those obtained using DMZn with the morphology exhibiting familiar hillock-shaped features. At lower temperatures (<300°C) and pressures (<30 Torr), growth rates are higher with the adduct source and the surface morphology is improved relative to films synthesized with DMZn. Hall measurements and photo-luminescence spectra of the grown films demonstrate that DMZn and DMZn:NEt3 produce material with comparable electronic and optical properties. Microwave plasma decomposition of ammonia is investigated as a possible approach to increasing nitrogen incorporation in ZnSe and photoluminescence spectra are compared to those realized with conventional ammonia doping.
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References
R.M. Park, M.B. Troffer, CM. Rouleau, J.M. DePuydt and M.A. Haase,Appl. Phys. Lett. 57, 2127 (1990); M.A. Haase, J. Qiu, J.M. DePuydt and H. Cheng,Appl. Phys. Lett. 59,1272 (1991).
W. Xie, D.C. Grillo, R.L. Gunshor, M. Kobayashi, G.C. Hua, N. Otsuka, H. Jeon, J. Ding and D.V. Nurmikko,Appl. Phys. Lett. 60, 463 (1992); H. Jeon, J. Ding, W. Patterson, D.V. Nurmikko, W. Xie, D.C. Grillo, M. Kobayashi and R.L. Gunshor,Appl. Phys. Lett. 59, 259 (1991).
H. Mitsuhashi, A. Yahata, T. Uemoto, A. Kamata, M. Okajima, K. Hirahara and T. Beppu,J. Cryst. Growth 101, 818 (1990).
A. Ohki, N. Shibata, K. Ando and A. Katsui,J. Cryst. Growth 99, 413 (1990).
T. Yasuda, I. Mitsuishi and H. Kukimoto,Appl. Phys. Lett. 52, 57 (1988).
K.P. Giapis, D.-C. Lu and K.F. Jensen,Appl. Phys. Lett. 54, 353 (1989).
H. Mitsuhashi, I. Mitsuishi and H. Kukimoto,J. Cryst. Growth 77, 219 (1986).
K.P. Giapis, D.-C. Lu, D.I. Fotiadis and K.F. Jensen,J. Cryst. Growth 104,629(1990).
K.P. Giapis, K.F. Jensen, J.E. Potts and S.J. Pachuta,J. Electron. Mater. 19, 453 (1990).
S. Patnaik, K.F. Jensen and K.P. Giapis,J. Cryst. Growth 107, 390(1991).
P.J. Wright, P.J. Panbrook, B. Cockayne, A.C. Jones, E.D. Orell, K.P. O’Donnell and B. Henderson,J. Cryst. Growth 94, 441 (1989).
O.F.Z. Khan, P. O’Brien, P.A. Hamilton, J.R. Walsh and A.C. Jones,Chemtronics 4, 244 (1989).
D. Heiman,Rev. Sci. Instrum. 56, 684 (1985).
R.H. Moss and J.S. Evans,J. Cryst. Growth 55, 129 (1981).
S. Patnaik and K.F. Jensen, unpublished.
D.I. Fotiadis, S. Kieda and K.F. Jensen,J. Cryst. Growth 102, 441 (1990).
W. Stutius,Appl. Phys. Lett. 38, 352 (1981).
K.P. Giapis, D.-C. Lu, K.F. Jensen and J.E. Potts,J. Cryst. Growth 104, 291 (1990).
B. Pajot, B. Clerjaud and J. Chevallier,Physica B 170, 371 (1991).
J.E. Nicholas, A.I. Spiers and N.A. Martin,Plasma Chem. Plasma Process. 6, 39 (1986).
F. Westley, J.T. Herron, R.F. Hampson and W.G. Mallard, NIST Chemical Kinetics Database, Version 4.0, national Institute of Standards and Technology (1992).
A.C. Jones,Chemtronics 4, 15 (1989).
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Huh, JS., Patnaik, S. & Jensen, K.F. Low pressure OMVPE of ZnSe with hydrogen selenide and dimethylzinc-triethylamine. J. Electron. Mater. 22, 509–514 (1993). https://doi.org/10.1007/BF02661623
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DOI: https://doi.org/10.1007/BF02661623