Abstract
Titanium dioxide film has been deposited on the p-type (100) silicon substrate using RF magnetron sputtering and Plasma-Enhanced Atomic Layer Deposition (PEALD) techniques. The effect of deposition techniques and the post-deposition annealing on the structural and electrical properties of TiO2 film have been investigated. Multiple angle ellipsometry, X-Ray diffraction (XRD) analysis, Capacitance–Voltage (C-V), Current density–Voltage (J-V), and breakdown voltage investigations has been carried out to obtain the structural and electrical characteristics of the deposited films. XRD data illustrates the amorphous nature of the deposited film for the annealing temperature from 375 to 500 °C. Multiple angle ellipsometry results show that the PEALD and sputtered films refractive index variation from 2.0463 to 2.1348 and 2.21 to 2.75, respectively, for annealing temperature 375 to 500 °C. Electrical characteristics show the leakage current density from 10−5 to 10−6 A/cm2 and flatband voltage shift in the positive side of 2.4 V for PEALD and 0.2 V for sputter-deposited films.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Richards, B.S.: Comparison of TiO2 and other dielectric coatings for buried‐contact solar cells: a review. Prog. Photovoltaics Res. Appl. 12, 253 (2004)
Kim, S.K., Kim, K.M., Jeong, D.S., Jeon, W., Yoon, K.J., Hwang, C.S.: Titanium dioxide thin films for next-generation memory devices. J. Mater. Res. 28, 313 (2013)
Paily, R., DasGupta, A., DasGupta, N., Bhattacharya, P., Misra, P., Ganguli, T., Kukreja, L.M., Balamurugan, A.K., Rajagopalan, S., Tyagi, A.K.: Pulsed laser deposition of TiO2 for MOS gate dielectric. Appl. Surf. Sci. 187, 297 (2002)
Rausch, N., Burte, E.P.: Thin high-dielectric TiO2 films prepared by low pressure MOCVD. Microelectron. Eng. 19, 725 (1992)
Okimura, K., Maeda, N., Shibata, A.: Characteristics of rutile TiO2 films prepared by rf magnetron sputtering at a low temperature. Thin Solid Films 281–282, 427 (1996)
Hassan, A.K., Chaure, N.B., Ray, A.K., Nabok, A.V., Habesch, S.: Structural and electrical studies on sol–gel derived spun TiO2 thin films. J. Phys. D Appl. Phys. 36, 1120 (2003)
Yeo, Y.C., King, T.J., Hu, C.: Direct tunneling leakage current and scalability of alternative gate dielectrics. Appl. Phys. Lett. 81, 2091 (2002)
Campbell, S.A., Gilmer, D.C., Wang, X.C., Hsieh, M.T., Kim, H.S., Gladfelter, W.L., Yan, J., Trans, I.E.E.E.: MOSFET transistors fabricated with high permitivity TiO/sub2/dielectrics. Electron Devices 44, 104 (1997)
Xie, D., Han, X., Li, R., Ren, T., Liu, L., Zhao, Y.: Characteristics of Pt/BiFeO3/TiO2/Si capacitors with TiO2 layer formed by liquid-delivery metal organic chemical vapor deposition. Appl. Phys. Lett. 97, 172901 (2010)
Campbell, S.A., Kim, H.-S., Gilmer, D.C., He, B., Ma, T., Gladfelter, W.L.: Titanium dioxide (TiO2)-based gate insulators. IBM J. Res. Dev. 43, 383 (1999)
Singh, P., et al.: On the structural and electrical properties of metal–ferroelectric–high k dielectric–silicon structure for non-volatile memory applications. Bull. Mater. Sci. 41(4), 101 (2018)
Lu, X.: High‐k Dielectrics in Ferroelectric Gate Field Effect Transistors for Nonvolatile Memory Applications. High-kGate Dielectr.C. Technol. (Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany), pp. 471–499 (2012)
Mudavakkat, V.H., Atuchin, V.V., Kruchinin, V.N., Kayani, A., Ramana, C.V.: Structure, morphology and optical properties of nanocrystalline yttrium oxide (Y2O3) thin films. Opt. Mater. (Amst). 34, 893 (2012)
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2020 Springer Nature Singapore Pte Ltd.
About this paper
Cite this paper
Jha, R.K., Singh, P., Goswami, M., Singh, B.R. (2020). Comparative Study on Structural and Electrical Characteristics of TiO2 Film Deposited by Plasma-Enhanced Atomic Layer Deposition and RF Sputtering. In: Dutta, D., Kar, H., Kumar, C., Bhadauria, V. (eds) Advances in VLSI, Communication, and Signal Processing. Lecture Notes in Electrical Engineering, vol 587. Springer, Singapore. https://doi.org/10.1007/978-981-32-9775-3_45
Download citation
DOI: https://doi.org/10.1007/978-981-32-9775-3_45
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-32-9774-6
Online ISBN: 978-981-32-9775-3
eBook Packages: EngineeringEngineering (R0)