Abstract
As was initially mentioned in Chap. 2, the effect of hydrogen on the mechanical properties of materials is an important area of research. While most of this work has involved the study of hydrogen embrittlement of metals [12.1,2], similar phenomena can occur in crystalline semiconductors. In this chapter we discuss some of these embrittlement effect and the defects which may be the cause of such problems.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
G. Alefeld, J. Völkl (eds.): Hydrogen in Metals II, Topics Appl. Phys., Vol.29 (Springer, Berlin, Heidelberg 1978)
L. Schlapbach (ed.): Hydrogen in Intermetallic Compounds I, Topics Appl. Phys., Vol.63 (Springer, Berlin, Heidelberg 1989)
C. Kisielkowski-Kemmerich: Private communication
C.J. Gallagher: Phys. Rev. 88, 721 (1952)
W. Shockley: Phys. Rev. 91, 228 (1953)
G.L. Pearson, W.J. Read, E.J. Morin: Phys. Rev. 93, 666 (1954)
A.G. Tweet: Phys. Rev. 99, 1245 (1955)
J. Hornstra: J. Phys. Chem. Sol. 35, 129 (1958)
P. Haasen, A. Seeger: Halbleiter Probleme 4, 68 (Vieweg, Braunschweig 1958)
W. Bardsley: Prog. Semicond. 4, 157 (1959)
W.C. Dash: J. Appl. Phys. 31, 2275 (1960)
E. Aerts, P. Delavignette, R. Siems, S. Amelinckx: J. Appl. Phys. 33, 3079 (1962)
A. Art, E. Aerts, P. Delavignette, S. Amelinckx: Appl. Phys. Lett. 2, 40 (1963)
R. Bullough, R.C. Newman: Prog. Semicond. 7, 99 (1963)
T. Figelski: Phys. Stat. Sol. 6, 529 (1964)
G.R. Booker, L. M. Brown: Phil. Mag. 11, 1315 (1965)
H. Alexander, R. Labusch, W. Sander: Solid State Commun. 3, 357 (1965)
J.P. Hirth, J. Lothe: Theory of Dislocations (McGraw-Hill, New York 1968) p.353
R.H. Glaenzer, A.G. Jordan: Solid State Electron. 12, 247 (1969)
H. Alexander, P. Haasen: Solid State Physics 22, 28 (Academic, New York 1968)
J.L.F. Ray, D.J.H. Cockayne: Phil. Mag. 22, 853 (1970) J.L.F. Ray, D.J.H. Cockayne: Proc. Roy. Soc. A 325, 543 (1971)
U. Schmidt, E. Weber, H. Alexander, W. Sander: Solid State Commun. 14, 735 (1974)
A. Gomez, D.J.H. Cockayne, P.B. Hirsch, V. Vitek: Phil. Mag. 31, 105 (1975)
A. George, G. Champier: Phil. Mag. 31, 961 (1975)
J. Blanc: Phil. Mag. 32, 1023 (1975)
H. Alexander, M. Kenn, B. Nordhofen, E. Weber: Lattice Defects in Semiconductors 1974 (List Phys., Bristol 1975) p.453
V.A. Grazhulis, V.V. Kveder, Yu.A. Osipyan: JETP Lett. 21, 335 (1975)
T. Wosinski, T. Figelski: Phys. Stat. Sol. B 71, 1273 (1975)
N.A. Drozdov, A.A. Patrin, V.D. Tkachev: JETP Lett. 23, 597 (1976)
K. Wessel, H. Alexander: Phil. Mag. 35V, 1523 (1977)
N.A. Drozdov, A.A. Patrin, V.D. Tkachev: Phys. Stat. Sol. (b) 83, K137 (1977)
E. Weber, H. Alexander: In Lattice Defects in Semiconductors 1976, ed. by N.B. Urli, J.W. Corbett (IoP, Bristol 1977) p.266
V.A. Grazhulis, V.V. Kveder, Yu.A. Ossipyan, Y. Lee, R.L. Kleinhenz, H. Van Camp, C. P. Scholes, J.W. Corbett: Phys. Lett. A 66, 398 (1978)
W. Schröter: In Defects, Radiation Effects in Semiconductors 1978, ed. by J.H. Albany (IoP, Bristol 1979) p.114
E.R. Weber, H. Alexander: J. Physique. Colloq. 40, C6–101 (1979)
R. Erdmann, H. Alexander: Phys. Stat. Sol. A 55, 251 (1979)
S. Amelinckx: In Dislocations in Solids: Dislocations in Crystals, ed. by F.R.N. Nabarro (North-Holland, Amsterdam 1979) Vol.2, Chap.6, pp.67–460, cf.288-300
R.H. Uebbing, P. Wagner, H. Baumgart, H. Queisser: Appl. Phys. Lett. 37, 1078 (1980)
N.A. Drozdov, A.A. Patrin, V.D. Tkachev: Phys. Stat. Sol. (a) 64, K63 (1981)
D. Gwinner, R. Labusch: Phys. Stat. Sol. (a) 65, K99 (1981)
J.R. Patel, L.C. Kimerling: Cryst. Res. Technol. 16, 187 (1981)
M. Suezawa, Y. Sasaki, Y. Nishina, K. Sumino: Jpn. J. Appl. Phys. 20, L537 (1981)
W. Szielko, O. Breitenstein, R. Pickenheim: Cryst. Res. Technol. 16, 197 (1981)
V.V. Kveder, Yu.A. Ossipyan: Sov. Phys. — JETP 53, 618 (1981) V.V. Kveder, Yu.A. Ossipyan, W. Schröter, G. Zoth: Phys. Stat. Sol. A 72, 701 (1982)
M. Suezawa, K. Sumino, M. Iwaizumi: In Defects, Radiation Effects in Semiconductors 1980, ed. by R.R. Hasiguti (Inst. Phys., Bristol 1981) p.407
M. Suezawa, K. Sumino, Y. Nishina: Jpn. J. Appl. Phys. 21, L518 (1992)
Yu.A. Ossipyan, A.M. Rushchev, E.A. Shteinman, E.B. Yakimov, N.A. Yarykin: Sov. Phys. JETP 55, 294 (1982)
H. Alexander, C. Kisielkowski-Kemmerich, E.R. Weber: Physica B 116, 583 (1983)
M. Suezawa, K. Sumino: Phys. Stat. Sol. (a) 78, 639 (1983)
M. Suezawa, Y. Sasaki, K. Sumino: Phys. Stat. Sol. (a) 64, 173 (1983)
M. Suezawa, K. Sumino: J. Physique, Colloq. 44, C4–133 (1983)
D. Gwinner: J. Physique, Colloq. 44, C4–141 (1983)
E.R. Weber, H. Alexander: J. Physique, Colloq. 44, C4–319 (1983)
W. Schröter, M. Seibt: J. Physique, Colloq. 44, C4–329 (1983)
A. Ourmazd: Contemp. Phys. 25, 251 (1984)
P. Omling, E.R. Weber, L. Montelius, H. Alexander, J. Michel: Phys. Rev. B 32, 6571 (1985)
H. Ono, K. Sumino: J. Appl. Phys. 57, 287 (1985)
R. Sauer, E.R. Weber, J. Stoltz, E.R. Weber, K.H. Kusters, H. Alexander: Appl. Phys. A 36, 1 (1985)
E.R. Weber, P. Omling, C. Kisieikowski, H. Alexander: Izv. Akad. Nauk 51, 644 (1987)
M. Yoshimatusu, T. Suzuki, T. Kabayashi, K. Kohra: J. Phys. Soc. Jpn. 17, 583 (1962)
Y. Yukimota, A. Hirano, Y. Sugioka: Jpn. J. Appl. Phys. 6, 420 (1967)
Y. Yukimota: Jpn. J. Appl. Phys. 7, 348 (1968)
M. Yoshimatsu: J. Phys. Soc. Jpn. 18, Suppl.II, 335 (1963)
Y. Sugita: Jpn. J. Appl. Phys. 4, 962 (1965)
A.J.R. DeKock: Philips Res. Repts. Suppl. No.1, 56 (1973)
E. Ligion, A. Guivarch: Rad. Eff. 27, 129 (1976)
W.K. Chu, R.H. Kastl, R.F. Lever, S. Mader, B.J. Masters: In Ion Implantation in Semiconductors 1976, ed. by F. Chernow, J.A. Borders, D.K. Brice (Plenum, New York 1977) p.483
E. Wolf, K. Fischer, B. Lux, H.-J. Schilling, W. Schröder, K. Studemann: 11th Congn Crystallography (Warsaw 1976) Top.11, p.6
E. Wolf: Phys. Stat. Sol. (a) 70, K59 (1982)
T.S. Plaskett: Trans. AIME 233, 809 (1965)
V.V. Voronkov: Sov. Phys. Crystallogr. 19, 137 (1974)
A.G. Tweet: J. Appl. Phys. 29, 1520 (1958)
A.G. Tweet: J. Appl. Phys. 30, 2002 (1959)
J.W. Corbett, C. Ortiz-Rodriguez, P. Deak, L.C. Snyder: J. Nucl. Materials 169, 179 (1989)
See, for example, J.W. Corbett, D. Peak, S.J. Pearton, A. Sganga. In Hydrogen in Disordered, Amorphous Solids, ed. by G. Bambakidis, R.C. Bowman, R.P. Griessen (Plenum, New York 1986) p.243
W.C. Dash: J. Appl. Phys. 27, 1193 (1956)
J.A. Kohn: Am. Miner. 43, 263 (1958)
J. Hornstra: J. Phys. Chem. Solids 5, 129 (1958)
J. Hornstra: Physica 25, 409 (1959)
T.-Y. Tan: Phil. Mag. 44, 101 (1981)
See, for example, the review by J.W. Corbett, J.P. Karins, T.-Y. Tan.: Nucl. Instr. & Methods 82/183, 457 (1981)
Y.H. Lee, R.L. Kleinhenz, J.W. Corbett: In Defects, Radiation Effects in Semiconductors 1978, ed. by J.H. Albany (IoP, Bristol 1979) p.521
J. W. Corbett, J.P. Karins, T.-Y. Tan: Nucl. Instr. & Meth. 182/183, 457 (1981)
G.D. Watkins, J.W. Corbett: Phys. Rev. 87, A543 (1965)
H. Riess: J. Chem. Phys. 25, 681 (1956)
J. Wang, C.A. Kittle: Phys. Rev. 87, 713 (1973)
V.A. Singh, C. Weigel, J.W. Corbett, L.M. Roth: Phys. Stat. Sol. (b) 81, 637 (1977)
V.A. Singh, J.W. Corbett, C. Weigel, L.M. Roth: Phys. Lett. A 65, 261 (1978)
C.O. Rodriguez, M. Jaros, S. Brank: Solid State Commun. 31, 43 (1979)
A. Mainwood, A.M. Stoneham: Physica B 116, 101 (1983)
J.W. Corbett, S.N. Sahu, T.S. Shi, L.C. Snyder: Phys. Lett. A 93, 303 (1983)
T.S. Shi, S.N. Sahu, J.W. Corbett, L.C. Snyder: Scientia Sinica 27, 98 (1984)
A. Mainwood, A.M. Stoneham: J. Phys. C 17, 2513 (1984)
G.G. De Leo, W.B. Fowler, G.D. Watkins: Phys. Rev. B 29, 1819 (1984)
J.J. Pankove, P.J. Zanzucchi, C.W. Magee, G. Lucovsky: Appl. Phys. Lett. 46, 421 (1985)
S. Estreicher: Phys. Rev. B 36, 9122 (1987)
P. Deak, L.C. Snyder, J. L. Lindström, J.W. Corbett, S.J. Pearton, A.J. Tavendale: Phys. Lett. A 126, 427 (1988)
P. Deak, L.C. Snyder, J.W. Corbett: In New Developments in Semiconductor Physics, ed. by G. Ferenczi, T. Belaxnay (Springer, Berlin, Heidelberg 1988) p.163
C.G. Van de Walle, Y. Bar-Yam, S.T. Pantelides: Phys. Rev. Lett. 60, 2761 (1988)
A.A. Bonapasta, A. Lapiccireila, N. Tomassini, M. Capizzi: Europhys. Lett. 7, 145 (1988)
M. Capizzi, C. Coluzza, A. Frova, A.A. Bonapasta, A. Lapiccireila, M. Tomassini, A. Forchal: Appl. Phys. Lett. 55, 772 (1989)
P. Deak, L.C. Snyder, J.W. Corbett: Phys. Rev. B 37, 6887 (1988)
C.G. van de Walle, Y. Bar-Yam, S.T. Pantelides: Phys. Rev. B 39, 10791 (1989)
G.G. De Leo, M.J. Dorogi, W. Beall Fowler: Phys. Rev. B 38, 2520 (1988)
S.T. Picraux, F.L. Vook: Phys. Rev. B 14, 1593 (1976)
S.T. Picraux, F.L. Vook: Phys. Rev. B 18, 2066 (1978)
B. Bech Nielsen: Phys. Rev. B 37, 6353 (1988)
Yu.V. Gorelkinskii, N.N. Nevinnyi: Pis’ma Zh. Tekh. Fiz. 13, 105 (1987)
V.A. Gordeev, Yu.V. Gorelkinskii, R.F. Konopleva, N.N. Nevinnyi, Yu.V. Obukhov, V. G. Firsov: Preprint 1340, Acad. Sci. USSR, Leningrad Nuclear Phys. Inst. (1987)
R.F. Kien, M. Celio, T.L. Estle, G.M. Luke, S.R. Kreitzmann, J.H. Brewer, D.R. Noakes, E.J. Ensaldo, K. Nishiyama: Phys. Rev. Lett. 58, 1780 (1987)
R.F. Kiefl, M. Celio, T.L. Estle, S.R. Kreitzman, G.M. Luke, T.M. Riseman, E.J. Ensaldo: Phys. Rev. Lett. 60, 224 (1988)
N.M. Johnson, F.A. Ponce, R.A. Street, R.J. Nemanich: Phys. Rev. B 35, 4188 (1987)
F.A. Ponce, N.M. Johnson, J.C. Tramontana, J. Walker: In Microscopy of Semiconducting Materials, ed. by A.G. Cullis (IoP, Bristol 1987) p.49
H.P. Strunk, H. Cerva, E.G. Mohr: In Microscopy of Semiconducting Materials, ed. by A.G. Cullis (IoP, Bristol 1987) p.457
H.P. Strunk, H. Cerva, E.G. Mohr: J. Electrochem. Soc. 135, 2876–2880 (1989)
S.-J. Jeng, G.S. Oehrlein, G.J. Scilla: Appl. Phys. Lett. 53, 1755 (1988)
N.M. Johnson, C. Herring: In Proc. Int’l Conf. Physics of Semicond. (Warsaw 1988)
F. Lu, J.W. Corbett, L.C. Snyder: Unpublished
E.G. Sieverts, J.W. Corbett: Solid State Commun. 43, 41 (1982)
U. Desnica, F. Lu, L.C. Snyder, J.W. Corbett: Unpublished
M. Yoshihiro, T. Ikeda, M. Tamura, T. Tokuyama, T. Tsuchimoto: In Proc. US-Japan Seminar on Ion Implantation in Semiconductors (Jpn. Soc. for the Promotion of Science, Kyoto 1971) p.33
M. Tamura: 2Appl. Phys. Lett. 23, 651 (1973)
S.I. Romanov, L.S. Smirnov: Sov. Phys.-Semiconductor 10, 519 (1976)
S.I. Romanov, L.S. Smirnov: Rad. Eff. 37, 121 (1978)
K.J. Chang, D.J. Chadi: Phys. Rev. Lett. 62, 937 (1989) and 60, 1422 (1988)
H.C. Snyman, J.H. Neethling, V.S. Vermaak: Appl. Phys. Lett. 39, 243 (1981)
H.C. Snyman, J.H. Neethiing: Rad. Eff. 60, 147 (1982)
H.C. Snyman, J.H. Neethling: Rad. Eff. 69, 199 (1983)
J.H. Neethling, H.C. Snyman: Rad. Eff. Lett. 76, 163 (1983)
J.H. Neethling, H.C. Snyman, C.A.B. Ball: In Proc. 13th Int’l Conf. on Defects in Semiconductors, ed. by L.C. Kimerling, J.M. Parsey Jr. (Met. Soc. AIME, Warrendale, PA 1985) p.427
J.H. Neethling, H.C. Snyman: Proc. Electron-Microscopy of Soc. of S. Africa 15, 47 (1985)
J.H. Neethling, H.C. Snyman: Proc. Electron-Microscopy of Soc. of S. Africa 16, 171 (1986)
J.H. Neethling, H.C. Snyman: J. Appl. Phys. 60, 941–945 (1986)
S.P. Arden, C.A.B. Ball, J.H. Neethling, H.C. Snyman: J. Appl. Phys. 60, 965 (1986)
J.H. Neethling, H.C. Snyman: J. Mat. Sci. 23, 2697 (1988)
J.H. Neethling, H.C. Snyman, C.A.B. Bail: J. Appl. Phys. 63, 704 (1988)
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1992 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Pearton, S.J., Corbett, J.W., Stavola, M. (1992). Hydrogen and the Mechanical Properties of Semiconductors. In: Hydrogen in Crystalline Semiconductors. Springer Series in Materials Science, vol 16. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84778-3_12
Download citation
DOI: https://doi.org/10.1007/978-3-642-84778-3_12
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-55491-2
Online ISBN: 978-3-642-84778-3
eBook Packages: Springer Book Archive