Abstract
In this work we deal with the numerical simulation of thermal oxidation in silicon device technology. This application is a complex coupled phenomen, involving the solution of a diffusion-reaction problem and of a fluid-structure interaction problem. Suitable iterative procedures are devised for handling nonlinearities and strong coupling between the sub-problems to be solved. In particular, we propose a unified dual-mixed hybrid formulation that allows for the simultaneous solution of the compressible/incompressible Navier equations in both solid and fluid domains. The accuracy and the flexibility of the proposed approach are demonstrated on benchmark test problems.
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© 2004 Springer-Verlag Berlin Heidelberg
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Causin, P., Sacco, R. (2004). Mixed-Hybrid Finite Element Methods for Coupled Problems in Silicon Dioxide Technology. In: Schilders, W.H.A., ter Maten, E.J.W., Houben, S.H.M.J. (eds) Scientific Computing in Electrical Engineering. Mathematics in Industry, vol 4. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-55872-6_15
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DOI: https://doi.org/10.1007/978-3-642-55872-6_15
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-21372-7
Online ISBN: 978-3-642-55872-6
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