Abstract
III–V compound multi-junction solar cells have great potential for space and terrestrial applications because they have high efficiency potential of more than 50% and superior radiation-resistance. As a result of developing wide bandgap InGaP double hetero structure tunnel junction for sub-cell interconnection, InGaAs middle cell lattice-matched to Ge substrate, and InGaP-Ge heteroface structure bottom cell, we have demonstrated 38.9% efficiency at 489-suns AM1.5 with InGaP/InGaP/Ge 3-junction solar cells In order to realize 40% and 50% efficiency, new approaches for novel materials and structures are being studied. We have obtained promising results: 1) high quality (In)GaAsN material with higher mobility by chemical beam epitaxy compared to those grown by the other growth methods, 2) 11.27% efficiency InGaAsN single-junction cells for 4-and 5-junction applications.
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© 2008 Tsinghua University Press, Beijing and Springer-Verlag GmbH Berlin Heidelberg
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Yamaguchi, M., Suzuki, H., Nishimura, K., Kojima, N., Ohsita, Y., Okada, Y. (2008). Novel Materials and Structures for Super High Efficiency Multi-Junction Solar Cells. In: Goswami, D.Y., Zhao, Y. (eds) Proceedings of ISES World Congress 2007 (Vol. I – Vol. V). Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-75997-3_199
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DOI: https://doi.org/10.1007/978-3-540-75997-3_199
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