Skip to main content

Part of the book series: Springer Handbooks ((SHB))

Abstract

Atomic diffusion in semiconductors refers to the migration of atoms, including host, dopant and impurities. Diffusion occurs in all thermodynamic phases, but the solid phase is the most important in semiconductors. There are two types of semiconductor solid phase: amorphous (including organic) and crystalline. In this chapter we consider crystalline semiconductors and describe the processes by which atoms and defects move between lattice sites. The emphasis is on describing the various conditions under which diffusion can occur, as well as the atomic mechanisms that are involved, rather than on tabulating data. For brevity’s sake, we also focus on the general features found in the principal semiconductors from Groups IV, III–V and II–VI; IV–VI and oxide semiconductors are excluded from consideration. It is not surprising that most of the data available in this field relate to the semiconductors that are technologically important – they are used to fabricate electronic and optoelectronic devices. One unavoidable consequence of this technological need is that diffusion data tend to be acquired in a piecemeal fashion.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 229.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Hardcover Book
USD 299.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. M. Knez: Semicond. Sci. Technol. 27, 074001 (2012)

    Google Scholar 

  2. P. Alen, M. Vehkamaki, M. Ritali, M. Leskela: J. Electrochem. Soc. 153, G304 (2006)

    CAS  Google Scholar 

  3. J. Hong, S. Lee, S. Lee, H. Han, C. Mahata, H.-W. Yeon, B. Koo, S.-I. Kim, T. Nam, K. Byun, B.-W. Min, Y.-W. Kim, H. Kim, Y.-C. Joo, T. Lee: Nanoscale 6, 7503 (2014)

    CAS  Google Scholar 

  4. J. Crank: The Mathematics of Diffusion, 2nd edn. (Clarendon Press, Oxford 1979)

    Google Scholar 

  5. M.E. Glicksman: Diffusion in Solids (Wiley, New York 2000)

    Google Scholar 

  6. A. Ural, P.B. Griffin, J.D. Plummer: J. Appl. Phys. 85, 6440 (1999)

    CAS  Google Scholar 

  7. I.B. Belova, D. Shaw, G.E. Murch: J. Appl. Phys. 106, 113707 (2009)

    Google Scholar 

  8. W. Frank, U. Gösele, H. Mehrer, A. Seeger: Diffusion in silicon and germanium. In: Diffusion in Crystalline Solids, ed. by G.E. Murch, A.S. Nowick (Academic, Orlando 1984) p. 63

    Google Scholar 

  9. D. Mathiot, J.C. Pfister: J. Appl. Phys. 66, 970 (1989)

    Google Scholar 

  10. D. Shaw: General features of diffusion in semiconductors. In: Atomic Diffusion in Semiconductors, ed. by D. Shaw (Plenum, London 1973) p. 1

    Google Scholar 

  11. D. Shaw: Self- and impurity diffusion processes in widegap II–VI materials. In: Widegap II-VI Compounds for Opto-electronic Applications, ed. by H.E. Ruda (Chapman and Hall, London 1992) p. 244

    Google Scholar 

  12. D. Shaw, P. Capper: J. Mater. Sci. Mater. El 11, 169 (2000)

    CAS  Google Scholar 

  13. T.Y. Tan, U. Gösele, S. Yu: Crit. Rev. Sol. St. Mater. Sci. 17, 47 (1991)

    CAS  Google Scholar 

  14. R.B. Fair: Concentration profiles of diffused dopants in silicon. In: Impurity Doping Processes in Silicon, ed. by F.F. Wang (North-Holland, Amsterdam 1981) p. 349

    Google Scholar 

  15. S.M. Hu: J. Appl. Phys. 70, R53 (1991)

    CAS  Google Scholar 

  16. G.B. Abdullaev, T.D. Dzhafarov: Atomic Diffusion in Semiconductor Structures (Harwood, Chur 1987)

    Google Scholar 

  17. M. Laudon, N.N. Carlson, M.P. Masquelier, M.S. Daw, W. Windl: Appl. Phys. Lett. 78, 201 (2001)

    CAS  Google Scholar 

  18. K. Rajendran, W. Schoenmaker: J. Appl. Phys. 89, 980 (2001)

    CAS  Google Scholar 

  19. H. Takeuchi, P. Ranada, V. Subramanian, T.-J. King: Appl. Phys. Lett. 80, 3706 (2002)

    CAS  Google Scholar 

  20. S.C. Jain, W. Schoenmaker, R. Lindsay, P.A. Stolk, S. Decoutere, M. Willander, H.E. Maes: J. Appl. Phys. 91, 8919 (2002)

    CAS  Google Scholar 

  21. L. Shao, J. Chen, J. Zhang, D. Tang, S. Patel, J. Liu, X. Wang, W.-K. Chu: J. Appl. Phys. 96, 919 (2004)

    CAS  Google Scholar 

  22. Y.M. Haddara, J.C. Bravman: Ann. Rev. Mater. Sci. 28, 185 (1998)

    CAS  Google Scholar 

  23. I. Lyubomirsky, V. Lyahovitskaya, D. Cahen: Appl. Phys. Lett. 70, 613 (1997)

    CAS  Google Scholar 

  24. C.H. Chen, U. Gösele, T.Y. Tan: Appl. Phys. A 68, 9, 19, 313 (1999)

    Google Scholar 

  25. P.N. Grillot, S.A. Stockman, J.W. Huang, H. Bracht, Y.L. Chang: J. Appl. Phys. 91, 4891 (2002)

    CAS  Google Scholar 

  26. E. Chason, S.T. Picraux, J.M. Poate, J.O. Borland, M.I. Current, T. Diaz de la Rubia, D.J. Eaglesham, O.W. Holland, M.E. Law, C.W. Magee, J.W. Mayer, J. Melngailis, A.F. Tasch: J. Appl. Phys. 81, 6513 (1997)

    Google Scholar 

  27. J.L. Melendez, J. Tregilgas, J. Dodge, C.R. Helms: J. Electron Mater. 24, 1219 (1995)

    CAS  Google Scholar 

  28. F.S. Ham: J. Phys. Chem. Solids 6, 335 (1958)

    CAS  Google Scholar 

  29. F.S. Ham: J. Appl. Phys. 30, 915 (1959)

    CAS  Google Scholar 

  30. F.S. Ham: J. Appl. Phys. 30, 1518 (1959)

    CAS  Google Scholar 

  31. S.C. Jain, A.E. Hughes: Proc. R. Soc. Lond. A. 360, 47 (1978)

    CAS  Google Scholar 

  32. D. Peak, J.W. Corbett: Radiation Effects 36, 197 (1978)

    CAS  Google Scholar 

  33. D. Shaw: Phys. Stat. Sol. A 60, 251 (1980)

    CAS  Google Scholar 

  34. A. Borghesi, B. Pivac, A. Sassella, A. Stella: J. Appl. Phys. 77, 4169 (1995)

    CAS  Google Scholar 

  35. K.F. Kelton, R. Falster, D. Gambaro, M. Olmo, M. Cornaro, P.F. Wei: J. Appl. Phys. 85, 8097 (1999)

    CAS  Google Scholar 

  36. S. Solmi, E. Landi, F. Baruffaldi: J. Appl. Phys. 68, 3250 (1990)

    CAS  Google Scholar 

  37. S. Solmi, D. Nobili: J. Appl. Phys. 83, 2484 (1998)

    CAS  Google Scholar 

  38. B. Columbeau, N.E.B. Cowern: Semicond. Sci. Technol. 19, 1339 (2004)

    Google Scholar 

  39. S. Mirabella, E. Bruno, F. Priolo, D. Salvador, E. Napolitani, A.V. Drigo, A. Carnera: Appl. Phys. Lett. 83, 680 (2003)

    CAS  Google Scholar 

  40. C.J. Ortiz, P. Pilcher, T. Fhner, F. Cristiano, B. Columbeau, N.E.B. Cowern, A. Claverie: J. Appl. Phys. 96, 4866 (2004)

    CAS  Google Scholar 

  41. H. Puchner, S. Selberherr: IEEE Trans. Electron. Dev. 42, 1750 (1995)

    CAS  Google Scholar 

  42. C. Poisson, A. Rolland, J. Bernardini, N.A. Stolwijk: J. Appl. Phys. 80, 6179 (1996)

    CAS  Google Scholar 

  43. D. Shaw: Semicond. Sci. Technol. 12, 1079 (1997)

    CAS  Google Scholar 

  44. I. Kaur, Y. Mishin, W. Gust: Fundamentals of Grain and Interphase Boundary Diffusion (Wiley, Chichester 1995)

    Google Scholar 

  45. G.J. Phelps: Semicond. Sci. Technol. 27, 035013 (2012)

    Google Scholar 

  46. S.M. Hu: J. Appl. Phys. 43, 2015 (1972)

    CAS  Google Scholar 

  47. N.G. Nilsson: Phys. Stat. Sol. A 50, K43 (1978)

    CAS  Google Scholar 

  48. H. Kroemer: IEEE Trans. Electron Dev. ED-25, 850 (1978)

    Google Scholar 

  49. A.P. Vasov, B.S. Sokolovskii, L.S. Monastyrskii, O.Yu. Bonchyk, A. Barcz: Thin Solid Films 459, 28 (2004)

    Google Scholar 

  50. E.A. Caridi, T.Y. Chang, K.W. Goossen, L.F. Eastman: Appl. Phys. Lett. 56, 659 (1990)

    CAS  Google Scholar 

  51. A. Hangleiter, F. Hitzel, S. Lafman, H. Rossow: Appl. Phys. Lett. 83, 1169 (2003)

    CAS  Google Scholar 

  52. B. Tuck: Atomic Diffusion in III-V Semiconductors (Adam Hilger, Bristol 1988)

    Google Scholar 

  53. S.J. Rothman: The measurement of tracer diffusion coefficient in solids. In: Diffusion in Crystalline Solids, ed. by G.E. Murch, A.S. Nowick (Academic, Orlando 1984) p. 1

    Google Scholar 

  54. R.M. Fleming, D.B. McWhan, A.C. Gossard, W. Wiegmann, R.A. Logan: J. Appl. Phys. 51, 357 (1980)

    CAS  Google Scholar 

  55. E. Hüger, R. Kube, H. Bracht, J. Stahn, T. Geue, H. Schmidt: Phys. Stat. Sol. B 249, 2108 (2012)

    Google Scholar 

  56. V. Kolkovsky, S. Klemm, M. Allardt, J. Weber: Semicond. Sci. Technol. 28, 025007 (2013)

    CAS  Google Scholar 

  57. S.K. Estreicher, A. Docaj, M.B. Bebek, D.J. Backlund, M. Stavola: Phys. Stat. Sol. A 209, 1872 (2012)

    CAS  Google Scholar 

  58. Y.L. Huang, Y. Ma, R. Job, W.R. Fahmer, E. Simeon, C. Claeys: J. Appl. Phys. 98, 033511 (2005)

    Google Scholar 

  59. D. Mathiot: Phys. Rev. B 40, 5867 (1989)

    CAS  Google Scholar 

  60. E.V. Lavrov: Physica B 404, 5075 (2009)

    CAS  Google Scholar 

  61. J.C. Fan, G.W. Ding, S. Fung, Z. Xie, Y.C. Zhong, K.S. Wong, G. Brauer, W. Anwand, D. Grambole, C.C. Ling: Semicond. Sci. Technol. 25, 085009 (2010)

    Google Scholar 

  62. L. Xue, D.H. Tang, X.D. Qu, L.Z. Sun, W. Lu, J.X. Zhong: J. Appl. Phys. 110, 053704 (2011)

    Google Scholar 

  63. E. Simoen, C. Claeys: Diffusion and solubility of dopants in germanium. In: Germanium-Based Technologies from Materials to Devices, ed. by C. Claeys, E. Simoen (Elsevier, Amsterdam 2007) p. 67

    Google Scholar 

  64. M. Werner, H. Mehrer, H.D. Hocheimer: Phys. Rev. B 37, 3930 (1985)

    Google Scholar 

  65. H. Bracht: Diffus. Fundam. 8, 1.1 (2008)

    Google Scholar 

  66. N.A. Stolwijk, W. Frank, J. Hlzl, S.J. Pearton, E.E. Haller: J. Appl. Phys. 57, 5211 (1985)

    CAS  Google Scholar 

  67. A. Strohm, S. Matics, W. Frank: Diffus. Defect Forum 194–199, 629 (2001)

    Google Scholar 

  68. H. Bracht, E.E. Haller, R. Clark-Phelps: Phys. Rev. Lett. 81, 393 (1998)

    CAS  Google Scholar 

  69. H. Bracht: Nuclear Instrum. Methods Phys. Res. B 253, 105 (2006)

    CAS  Google Scholar 

  70. A. Ural, P.B. Griffin, J.D. Plummer: Phys. Rev. Lett. 83, 3453 (1999)

    Google Scholar 

  71. T.Y. Tan, U. Gösele: Point defects, diffusion, and precipitation. In: Handbook of Semiconductor Technolgy, , ed by K. A. Jackson, W. Schrter, Vol. 1, (Wiley-VCH, Weiheim 2000) p. 231

    Google Scholar 

  72. O. Krause, H. Ryssel, P. Pichler: J. Appl. Phys. 91, 5645 (2002)

    CAS  Google Scholar 

  73. S. Solmi, A. Parisini, M. Bersani, D. Giubertoni, V. Soncini, G. Carnevale, A. Benvenuti, A. Marmiroli: J. Appl. Phys. 92, 1361 (2002)

    CAS  Google Scholar 

  74. J.S. Christensen, H.H. Radamson, A.Yu. Kuznetsov, B.G. Svensson: Appl. Phys. Lett. 82, 2254 (2003)

    Google Scholar 

  75. L. Lerner, N.A. Stolwijk: Appl. Phys. Lett. 86, 011901 (2005)

    Google Scholar 

  76. R.C. Newman: J. Phys. Condens. Mat. 12, R335 (2000)

    Google Scholar 

  77. N.R. Zangenberg, J. Fage-Pedersen, J. Lundsgaard-Hansen, A. Nylandsted-Larsen: Defect Diffus. Forum 194-199, 703 (2001)

    CAS  Google Scholar 

  78. A.D.N. Paine, A.F.W. Willoughby, M. Morooka, J.M. Bonar, P. Phillips, M.G. Dowsett, G. Cooke: Defect Diffus. Forum 143-147, 1131 (1997)

    CAS  Google Scholar 

  79. J.S. Christensen, H.H. Radamson, A.Yu. Kuznetsov, B.G. Svensson: J. Appl. Phys. 94, 6533 (2003)

    Google Scholar 

  80. P. Laitinen, I. Rihimki, J. Räisänen: Phys. Rev. B 68 155209 (2003)

    Google Scholar 

  81. A. Strohm, T. Voss, W. Frank, P. Laitinen, J. Räisänen: Z. Metallkunde 93, 737 (2002)

    CAS  Google Scholar 

  82. Y. Dong, W. Chern, P.M. Mooney, J.L. Hoyt, G. Xia: Semicond. Sci. Technol. 29, 015012 (2014)

    CAS  Google Scholar 

  83. J.M. Lento, L. Torpo, T.E.M. Staab, R.M. Nieminen: J. Phys. Condens. Matter 16, 1053 (2004)

    CAS  Google Scholar 

  84. M. Bockstedte, A. Mattausch, O. Pankratov: Phys. Rev. B 68, 205201 (2003)

    Google Scholar 

  85. J.D. Hong, R.F. Davis, D.E. Newbury: J. Mater. Sci. 16, 2485 (1981)

    CAS  Google Scholar 

  86. Y.A. Vodakov, G.A. Lomakina, E.N. Mokhov, V.G. Oding: Sov. Phys. Solid State 19, 1647 (1977)

    Google Scholar 

  87. Y.A. Vodakov, E.N. Mokhov: Diffusion and solubility of impurities. In: Silicon Carbide – 1973, ed. by R.C. Marshall, J.W. Faust Jr., C.E. Ryan (Univ. South Carolina Press, Columbia 1973) p. 508

    Google Scholar 

  88. I.O. Usov, A.A. Suvorova, Y.A. Kudriatsev, A.V. Suvorova: J. Appl. Phys. 96, 4960 (2004)

    CAS  Google Scholar 

  89. N. Bagraev, A. Bouravleuv, A. Gippius, L. Klyachkin, A. Malyarenko: Defect Diffus. Forum 194–199, 679 (2001)

    Google Scholar 

  90. S. Bai, R.P. Devaty, W.J. Choyke, U. Kaiser, G. Wagner, M.F. MacMillan: Appl. Phys. Lett. 83, 3171 (2003)

    CAS  Google Scholar 

  91. D. Shaw: Semicond. Sci. Technol. 18, 627 (2003)

    CAS  Google Scholar 

  92. L. Wang, J.A. Wolk, L. Hsu, E.E. Haller, J.W. Erickson, M. Cardona, T. Ruf, J.P. Silveira, F. Brione: Appl. Phys. Lett. 70, 1831 (1997)

    CAS  Google Scholar 

  93. O. Ambacher, F. Freudenberg, R. Dimitrov, H. Angerer, M. Stutzmann: Jpn. J. Appl. Phys. 37, 2416 (1998)

    CAS  Google Scholar 

  94. S. Limpijumnong, C.G. Van de Walle: Phys. Rev. B 69, 035207 (2004)

    Google Scholar 

  95. M.G. Ganchenkova, R.M. Nieminen: Phys. Rev. Lett. 96, 196402 (2006)

    CAS  Google Scholar 

  96. U. Gerstmann, A.P. Seitsonen, F. Mauri: Phys. Stat. Sol. B 245, 924 (2008)

    CAS  Google Scholar 

  97. J.C. Hu, M.D. Deal, J.D. Plummer: J. Appl. Phys. 78, 1595 (1995)

    CAS  Google Scholar 

  98. J. Pöpping, N.A. Stolwijk, G. Bösker, C. Jäger, W. Jäger, U. Södervall: Defect Diffus. Forum 194–199, 723 (2001)

    Google Scholar 

  99. O. Koskelo, J. Risnen, F. Tuomisto, J. Sadovski: Semicond. Sci. Technol. 24, 045011 (2009)

    Google Scholar 

  100. M. Bosi, G. Attolini, C. Ferrari, C. Frigeri, M. Calicchio, F. Rossi, K. Vad, A. Csik, Z. Zolnai: J. Crystal Growth 318, 367 (2011)

    CAS  Google Scholar 

  101. A. Bchetnia, C. Saidia, M. Souissi, T. Boufaden, B. El Jani: Semocond. Sci. Technol. 24, 095020 (2009)

    Google Scholar 

  102. A.Y. Polyakov, N.B. Smirnov, S.J. Pearton, F. Ren, B. Theys, F. Jomard, Z. Teukam, V.A. Dmitriev, A.E. Nikolaev, A.S. Usikov, I.P. Nikitina: Appl. Phys. Lett. 79, 1834 (2001)

    CAS  Google Scholar 

  103. I. Harrison: J. Mater. Sci. Mater. Electron. 4, 1 (1993)

    CAS  Google Scholar 

  104. S. Govindaaraju, J.M. Reifsnider, M.M. Oye, A.L. Holmes: J. Electron. Mater. 32, 29 (2003)

    Google Scholar 

  105. D. Shaw: J. Crystal Growth 86, 778 (1988)

    CAS  Google Scholar 

  106. D. Shaw: J. Electron. Mater. 24, 587 (1995)

    CAS  Google Scholar 

  107. D. Shaw: Diffusion in MCT. In: Mercury Cadmium Telluride, ed. by P. Capper, J. Garland (Wiley, Chichester 2011)

    Google Scholar 

  108. P. Capper, C.D. Maxey, C.L. Jones, J.E. Gower, E.S. O’Keefe, D. Shaw: J. Electron. Mater. 28, 637 (1999)

    CAS  Google Scholar 

  109. M.D. McCluskey, S.J. Jokela: J. Appl. Phys. 106, 071101 (2009)

    Google Scholar 

  110. D.J. Fisher (Ed.): Diffusion and Defects in ZnO, (Trans. Tech. Publications, Pfäffikon 2013)

    Google Scholar 

  111. D. Shaw: Semicond. Sci. Technol. 27, 035003 (2012)

    Google Scholar 

  112. D. Shaw: Semicond. Sci. Technol. 15, 911 (2000)

    CAS  Google Scholar 

  113. M. Kuttler, M. Grundmann, R. Heitz, U.W. Pohl, D. Bimberg, H. Stanzel, B. Hahn, W. Gebbhart: J. Crystal Growth 159, 514 (1996)

    CAS  Google Scholar 

  114. A. Barcz, G. Karczewski, T. Wojtowicz, J. Kossut: J. Crystal Growth 159, 980 (1996)

    CAS  Google Scholar 

  115. Z. Balogh, Z. Erdélyi, D.L. Beke, G.A. Langer, A. Csik, H.-G. Boyen, U. Wiedwald, P. Ziemann, A. Portavoce, C. Girardeaux: Appl. Phys. Lett. 92, 143104 (2008)

    Google Scholar 

  116. M. Strassburg, M. Kuttler, O. Stier, U.W. Pohl, D. Bimburg, M. Behringer, D. Hommel: J. Crystal Growth 184–185, 465 (1998)

    Google Scholar 

  117. M. Eslamian, M. Ziad Saghir: Fluid Dyn. Mater. Process. 8, 353 (2012)

    Google Scholar 

  118. J.C. Wang, R.F. Wood, P.P. Pronko: Appl. Phys. Lett. 33, 455 (1978)

    CAS  Google Scholar 

  119. S.K. Srivastava, D.K. Avasthi, W. Assmann, Z.G. Wang, H. Kucal, E. Jacquet, H.D. Carstanjen, M. Toulemonde: Phys. Rev. B 71, 193405 (2005)

    Google Scholar 

  120. P. Baeri, S.U. Campisano, G. Foti, E. Rimini: Appl. Phys. Lett. 33, 137 (1978)

    CAS  Google Scholar 

  121. J.C. Dyre: J. Phys. C 19, 5655 (1986)

    Google Scholar 

  122. Y.L. Khait, R. Beserman, D. Shaw, K. Dettmer: Phys. Rev. B 50, 14893 (1994)

    CAS  Google Scholar 

  123. T. Noda: J. Apl. Phys. 94, 6396 (2003)

    CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Derek Shaw .

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2017 Springer International Publishing AG

About this chapter

Cite this chapter

Shaw, D. (2017). Diffusion in Semiconductors. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Cham. https://doi.org/10.1007/978-3-319-48933-9_6

Download citation

Publish with us

Policies and ethics