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The Nature and Origin of Atomic Ordering in Group III-V Antimonide Semiconductor Alloys

  • Chapter
Spontaneous Ordering in Semiconductor Alloys

Abstract

Group III-V antimonide semiconductor alloys exhibit several types of atomic ordering when grown by molecular-beam epitaxy and metal-organic vapour-phase epitaxy. This chapter describes in detail the ordered structures that are observed and discusses in depth the current understanding of the origin of the ordering. The atomic ordering is, in general, induced at the surface during growth. The type of ordering observed is shown to depend on the growth technique and the structure of the growth surface. For (001) surfaces, it is found that surface reconstruction, in particular, the formation of surface dimer bonds, plays a key role in the ordering process. Growth of layers with different surface reconstructions results in distinct types of atomic ordering. A segregation of different-sized atoms that is driven by dimer-induced subsurface stresses is believed to occur. This lowers the strain energy associated with the surface dimerisation and accommodation of the different-sized atoms at the reconstructed growth surface. Surface atomic steps play an important role in “phase-locking” consecutively ordered surface layers. It is concluded that this model is currently the one most able to explain the majority of the observed ordering behaviour in group III-V and group IV alloy semiconductor layers grown on near (001) orientation substrates.

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  1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO, 80401, USA

    A. G. Norman

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    Angelo Mascarenhas

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Norman, A.G. (2002). The Nature and Origin of Atomic Ordering in Group III-V Antimonide Semiconductor Alloys. In: Mascarenhas, A. (eds) Spontaneous Ordering in Semiconductor Alloys. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-0631-7_2

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